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V

Vincent Sallet

université de versailles st-quentin en yvelines

H指数:26

被引数:2,547

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Impact of Si ion implantation on α-Ga₂O₃ and β-Ga₂O₃ lateral MESFET transistors

Si离子注入对α-Ga₂O₃和β-Ga₂O₃横向MESFET晶体管的影响

Journal of Alloys and Compounds

IF6.3

2026-09-170

OAAI

p-Type β-Ga2O3 Homoepitaxial Films with Superior Electrical Transport Properties

p型β-Ga₂O₃同质外延薄膜及其优异的电学输运性能

Advanced Electronic Materials

IF5.3

2025-08-190

OAAI

Tailoring crystallisation of anatase TiO2 ultra-thin films grown by atomic layer deposition using 2D oxides as growth template

APPLIED SURFACE SCIENCE

IF6.9

2023-12-015

PRE

Assessment of large critical electric field in ultra-wide bandgap p-type spinel ZnGa2O4

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-02-221

OA

Effects of thermal emission and re-trapping of photo-injected carriers on the optical transitions of InAs/GaAs quantum dots (vol 271, 115238, 2021)

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2023-01-010

PRE

An explanation for the non-monotonic temperature dependence of the photoluminescence spectral features of self-organized InAs QDs

JOURNAL OF LUMINESCENCE

IF3.6

2023-01-014

OAAI

MOCVD Growth and Structural Properties of ZnS Nanowires: A Case Study of Polytypism

IF4.3

2022-07-064

OAAI

Impact of radiation and electron trapping on minority carrier transport in p-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2022-06-0711

OA

Characterization of Eu doped ZnO micropods prepared by chemical bath deposition on p-Si substrate

IF3.9

2022-04-0113

OAAI

Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3

IF4.5

2022-03-0817

OA

Detection of optical emissions from deep localized states in a self-assembled InAs/GaAs QD structure

APPLIED SURFACE SCIENCE ADVANCES

IF8.7

2022-02-011

OAAI

Effects of thermal emission and re-trapping of photo-injected carriers on the optical transitions of InAs/GaAs quantum dots

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2021-09-013

OAAI

Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide

PHYSICAL REVIEW B

IF3.7

2021-07-124

OAAI

Induced structural modifications in ZnS nanowires via physical state of catalyst: Highlights of 15R crystal phase

IF9

2021-06-0112

OAAI

Characterization of sol gel Zn1-xCaxO thin layers deposited on p-Si substrate by spin-coating method

OPTICAL MATERIALS

IF4.2

2020-12-016

OAAI

p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics

CRYSTAL GROWTH & DESIGN

IF3.4

2020-03-0684

OAAI

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2019-01-0179

OAAI

Resolving ZnO-based coaxial core-multishell heterostructure by electrical scanning probe microscopy

APPLIED PHYSICS LETTERS

IF3.6

2018-11-301

OAAI

Crystal Facet Engineering in Ga-Doped ZnO Nanowires for Mid-Infrared Plasmonics

CRYSTAL GROWTH & DESIGN

IF3.4

2018-06-188

OAAI

Effect of Growth Temperature on the Structural and Morphological Properties of MgCdO Thin Films Grown by Metal Organic Chemical Vapor Deposition

CRYSTAL GROWTH & DESIGN

IF3.4

2017-11-1312

OA