Woong Choi

kookmin university

H指数:30

被引数:5,871

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Disentangling substrate-induced strain and interfacial environment in solid-phase-crystallized Ge thin films using an Al2O3 buffer layer

利用Al2O3缓冲层区分固相晶化Ge薄膜中的衬底诱导应变和界面环境

Journal of Materials Science

IF3.9

2026-10-260

PRE

Twin-mediated orientation engineering for high-mobility Ge thin film via laser crystallization

通过激光晶化实现高迁移率Ge薄膜的双晶介导取向工程

Applied Surface Science

IF6.9

2026-05-050

PRE

Effect of nitrogen plasma treatment on carrier mobility in polycrystalline Ge thin films

氮等离子体处理对多晶Ge薄膜载流子迁移率的影响

Materials Science in Semiconductor Processing

IF4.6

2025-10-190

PRE

Enhancing carrier mobility in solid-phase-crystallized polycrystalline germanium thin films

增强固相晶化多晶锗薄膜的载流子迁移率

Materials Science in Semiconductor Processing

IF4.6

2025-07-120

PRE

Surface modification of MoS2 and WSe2 with TiOx nanoparticles for doping control

用TiOx纳米颗粒对MoS2和WSe2进行表面改性以控制掺杂

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-06-010

PRE

Annealing-free Ohmic contact of β-Ga2O3via nitrogen plasma treatment

通过氮气等离子体处理的β-Ga2O3无退火欧姆接触

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-010

PRE

Low-temperature crystallization of BeO-assisted polycrystalline germanium layer for monolithic 3D integration

用于单片3D集成的BeO辅助多晶锗层的低温结晶

APPLIED SURFACE SCIENCE

IF6.9

2024-10-010

PRE

Substrate-dependent carrier mobility in polycrystalline Ge thin films

MATERIALS TODAY COMMUNICATIONS

IF4.5

2024-08-011

PRE

Effect of SiO2 capping on the solid-phase-crystallized Ge thin films

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-10-012

PRE

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

用于多功能光电传感器的间接带隙2D过渡金属二硫化物的光学增强

ADVANCED MATERIALS

IF26.8

2023-09-2945

PRE

Capacitance-voltage analysis of Al2O3/WS2 metal-oxide-semiconductor capacitors

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-07-281

PRE

In situ electron-doping of MoS2 thin films by embedded MoOxSy particles during chemical vapor deposition

JOURNAL OF MATERIALS SCIENCE

IF3.9

2020-11-025

PREAI

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

用于大面积二维电子的层状氮化硼的原子层沉积

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-07-1525

PREAI

Electrical properties of Al2O3/WSe2 interface based on capacitance-voltage characteristics

基于电容-电压特性的Al2O3/WSe2界面电性能研究

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-06-082

PREAI

Rapid and mass-producible synthesis of high crystallinity MoSe2 nanosheets by ampoule-loaded chemical vapor deposition

NANOSCALE

IF5.1

2020-01-018

PREAI

Oxidation of WS2 and WSe2 monolayers by ultraviolet-ozone treatment

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-09-2723

PREAI

Effect of Ultraviolet-Ozone Treatment on MoS2 Monolayers: Comparison of Chemical-Vapor-Deposited Polycrystalline Thin Films and Mechanically Exfoliated Single Crystal Flakes

NANOSCALE RESEARCH LETTERS

IF4.1

2019-08-1528

OAAI

Low-temperature behaviors of multilayer MoS2 transistors with ohmic and Schottky contacts

APPLIED PHYSICS LETTERS

IF3.6

2019-07-1510

PREAI

Large-area MoS2-MoOx heterojunction thin-film photodetectors with wide spectral range and enhanced photoresponse

APL MATERIALS

IF4.5

2019-06-1830

OAAI

Sensitivity and Stability Enhancement of Surface Plasmon Resonance Biosensors based on a Large-Area Ag/MoS2 Substrate

SENSORS

IF3.5

2019-04-2141

OAAI

Woong Choi

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