未登录

B

B. Sklénard

univ. grenoble alpes

H指数:16

被引数:1,198

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Structural Relaxation Governs the Stoichiometry Dependence of Core-level Shifts in MoSx

结构弛豫主导MoSx中芯能级位移的化学计量比依赖性

The Journal of Physical Chemistry C

IF3.2

2026-07-050

PRE

Solid-phase epitaxial regrowth of phosphorus-doped silicon by nanosecond laser annealing

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-02-010

OAAI

Multi-physics modeling of phase change memory operations in Ge-rich Ge2Sb2Te5 alloys

富Ge的Ge₂Sb₂Te₅合金中相变存储器操作的跨物理建模

JOURNAL OF APPLIED PHYSICS

IF2.5

2024-10-080

OA

Atomistic description of Si etching with HCl

APPLIED SURFACE SCIENCE

IF6.9

2024-06-010

PRE

Equivariant graph neural network interatomic potential for Green-Kubo thermal conductivity in phase change materials

PHYSICAL REVIEW MATERIALS

IF3.4

2024-03-180

OA

Electronic polarization effects in core-level spectroscopy

PHYSICAL REVIEW B

IF3.7

2024-03-140

OA

Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian

APPLIED PHYSICS LETTERS

IF3.6

2024-02-010

PRE

Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits

PHYSICAL REVIEW B

IF3.7

2023-11-147

OA

Oxygen vacancy and hydrogen in amorphous HfO2

非晶态HfO2中的氧空位和氢

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-04-111

OA

Electron removal energies in noble-gas atoms up to 100 keV: Ab initio GW versus x-ray photoelectron spectroscopy

PHYSICAL REVIEW B

IF3.7

2022-08-294

OA

Electronic and thermal properties of GeTe/Sb2Te3 superlattices by ab initio approach: Impact of Van der Waals gaps on vertical lattice thermal conductivity

APPLIED PHYSICS LETTERS

IF3.6

2021-11-187

OA

Collective dipole effects in ionic transport under electric fields

电场作用下离子输运中的集体偶极效应

NATURE COMMUNICATIONS

IF15.7

2020-07-038

OAAI

Plane-wave many-body corrections to the conductance in bulk tunnel junctions

PHYSICAL REVIEW B

IF3.7

2020-02-031

OAAI

Optical vs electronic gap of hafnia by ab initio Bethe-Salpeter equation

APPLIED PHYSICS LETTERS

IF3.6

2018-10-2615

OAAI

Reduction of Monoclinic HfO2: A Cascading Migration of Oxygen and Its Interplay with a High Electric Field

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2016-10-2130

PREAI

An atomistic investigation of the composition dependence in SiGe alloys during Solid Phase Epitaxial Regrowth

ACTA MATERIALIA

IF9.3

2016-03-013

PREAI

Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-02-011

PREAI

An atomistic investigation of the impact of in-plane uniaxial stress during solid phase epitaxial regrowth

APPLIED PHYSICS LETTERS

IF3.6

2013-04-1612

PREAI