A. Kinomura - Publications, H-index & Citations

A. Kinomura

Kyoto University

22H指数

252论文数

1.9K被引数

收录论文 24

发表时间

Transmission-type brightness-enhancement system for reactor-based slow positron beamline 基于反应堆的慢正电子束线传输型亮度增强系统

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

IF1.3

2025-11-01

PREAI

Kuzuya, Yoshihiro; Oshima, Nagayasu; Yabuuchi, Atsushi; Kinomura, Atsushi

Effect of soft X-rays on vacancy-type defects in highly hydrogenated DLC films 软X射线对高氢化DLC薄膜中空位型缺陷的影响

DIAMOND AND RELATED MATERIALS

IF5.1

2025-02-01

PREAI

Kanda, Kazuhiro; Niwa, Daisuke; Mishima, Tomohiro; Hori, Fuminobu; Yabuuchi, Atsushi; Kinomura, Atsushi

Positron annihilation spectroscopy of thermally annealed hydrogenated amorphous carbon films

VACUUM

IF3.9

2023-09-01

PREAI

Nakao, Setsuo; Kinomura, Atsushi; Ikeda, Keisuke; Nakajima, Makoto; Yabuuchi, Atsushi; Suzuki, Kohtaku

Improvement of laccase biosensor characteristics using sulfur-doped TiO2 nanoparticles

BIOELECTROCHEMISTRY

IF4.5

2022-10-01

PREAI

Kavetskyy, Taras; Smutok, Oleh; Demkiv, Olha; Kukhazh, Yuliia; Stasyuk, Nataliya; Leonenko, Evhen; Kiv, Arnold; Kobayashi, Yoshinori; Kinomura, Atsushi; Sausa, Ondrej; Gonchar, Mykhailo; Katz, Evgeny

Gamma-ray induced photo emission from GaN single crystal wafer

APPLIED PHYSICS LETTERS

IF3.6

2021-01-22

PREAI

Nakamura, Toshihiro; Nishimura, Tomoaki; Kuriyama, Kazuo; Nakamura, Tohru; Kinomura, Atsushi

Radiophotoluminescence phenomenon in copper-doped aluminoborosilicate glass

JOURNAL OF THE AMERICAN CERAMIC SOCIETY

IF3.8

2018-09-10

PREAI

Hashikawa, Ryo; Fujii, Yasuhiro; Kinomura, Atsushi; Saito, Takeshi; Okada, Arifumi; Wakasugi, Takashi; Kadono, Kohei

Depth profiling of defects in ion-implanted Ni and Fe by positron annihilation measurements 通过正电子an没测量对离子注入的Ni和Fe中的缺陷进行深度剖析

SURFACE & COATINGS TECHNOLOGY

IF6.1

2011-11-01

PREAI

Kinomura, A.; Suzuki, R.; Ohdaira, T.; Oshima, N.; Ito, K.; Kobayashi, Y.

Rapid three-dimensional imaging of defect distributions using a high-intensity positron microbeam

APPLIED PHYSICS LETTERS

IF3.6

2009-05-15

PREAI

Oshima, N.; Suzuki, R.; Ohdaira, T.; Kinomura, A.; Narumi, T.; Uedono, A.; Fujinami, M.

Evolution of pores in mesoporous silica films: Porogen loading effect

APPLIED SURFACE SCIENCE

IF6.9

2008-10-01

PREAI

He, Chunqing; Oka, Toshitaka; Kobayashi, Yoshinori; Oshima, Nagayasu; Ohdaira, Toshiyuki; Kinomura, Atsushi; Suzuki, Ryoichi

Positronium annihilation and pore surface chemistry in mesoporous silica films

APPLIED PHYSICS LETTERS

IF3.6

2007-07-10

PREAI

He, Chunqing; Oka, Toshitaka; Kobayashi, Yoshinori; Oshima, Nagayasu; Ohdaira, Toshiyuki; Kinomura, Atsushi; Suzuki, Ryoichi

Evidence for pore surface dependent positronium thermalization in mesoporous silica/hybrid silica films

PHYSICAL REVIEW B

IF3.7

2007-05-02

PREAI

He, Chunqing; Ohdaira, Toshiyuki; Oshima, Nagayasu; Muramatsu, Makoto; Kinomura, Atsushi; Suzuki, Ryoichi; Oka, Toshitaka; Kobayashi, Yoshinori

Neutron-enhanced annealing of radiation damage formed by self-ion implantation in silicon

APPLIED PHYSICS LETTERS

IF3.6

2006-06-15

OAAI

Kinomura, A; Chayahara, A; Mokuno, Y; Tsubouchi, N; Horino, Y; Yoshiie, T; Hayashi, Y; Xu, Q; Ito, Y; Ishigami, R; Yasuda, K

Positron annihilation studies of mesoporous silica films using a slow positron beam 使用慢正电子束对介孔二氧化硅薄膜进行正电子an没研究

APPLIED SURFACE SCIENCE

IF6.9

2006-02-01

PREAI

He, CQ; Muramatsu, M; Ohdaira, T; Kinomura, A; Suzuki, R; Ito, K; Kabayashi, Y

Surface segregation phenomena of solute elements in Al-Pb and Al-Fe dilute binary alloys

APPLIED SURFACE SCIENCE

IF6.9

2004-11-01

PREAI

Tsubakino, H; Nogami, A; Yamamoto, Y; Yamamoto, A; Terasawa, M; Mitamura, T; Kinomura, A; Horino, Y

Metal plasma source for PBII using arc-like discharge with hot cathode 使用带有热阴极的电弧放电的PBII金属等离子体源

SURFACE & COATINGS TECHNOLOGY

IF6.1

2004-08-01

PREAI

Chayahara, A; Mokuno, Y; Kinomura, A; Tsubouchi, N; Heck, C; Horino, Y

3C-SiC thin epilayer formation at low temperature using ion beams

APPLIED SURFACE SCIENCE

IF6.9

2003-05-01

PREAI

Tsubouchi, N; Chayahara, A; Mokuno, Y; Kinomura, A; Horino, Y

Initial growth of heteroepitaxial 3C-SiC on Si using energetic species

APPLIED PHYSICS LETTERS

IF3.6

2000-07-31

PREAI

Tsubouchi, N; Chayahara, A; Kinomura, A; Horino, Y

Mass effects on regrowth rates and activation energies of solid-phase epitaxy induced by ion beams in silicon

PHYSICAL REVIEW B

IF3.7

1999-06-15

PREAI

Kinomura, A; Williams, JS; Fujii, K

Diffusion and transient trapping of metals in silicon

PHYSICAL REVIEW B

IF3.7

1999-03-15

PREAI

Wong-Leung, J; Williams, JS; Kinomura, A; Nakano, Y; Hayashi, Y; Eaglesham, DJ

Efficient gettering of low concentrations of copper contamination to hydrogen induced nanocavities in silicon

APPLIED PHYSICS LETTERS

IF3.6

1998-11-02

PREAI

Kinomura, A; Williams, JS; Wong-Leung, J; Petravic, M; Nakano, Y; Hayashi, Y

研究方向