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Pramod Kumar Tiwari

indian institute of technology system (iit system)

20H指数
148论文数
1.4K被引数
收录论文 20
发表时间
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Aluminium nitride-based single-electron transistor for toxic gas sensing application氮化铝基单电子晶体管在有毒气体传感中的应用
errSurfaces and Interfaces
IF6.3
err2026-09-01
err0
PREAI
errPrity Sinha; Pramod Kumar Tiwari
err分享
err收藏
Heavy-ion radiation response of reconfigurable FBFET for radiation-hardened applications可重构FBFET在抗辐射加固应用中的重离子辐射响应
errMicro and Nanostructures
IF3
err2026-08-05
err0
PREAI
errSai Shirov Katta; Pramod Kumar Tiwari
err分享
err收藏
Aluminium arsenide-based single-electron transistor characteristics and its potential for charge detection砷化铝基单电子晶体管特性及其在电荷检测方面的潜力
errphysica e: low-dimensional systems and nanostructures
IF0
err2026-03-11
err0
PREAI
errPrity Sinha; Pramod Kumar Tiwari
err分享
err收藏
Geometry-Driven Thermal Noise Trends in GAA Nanowire Devices
errSilicon
IF3.3
err2026-01-26
err0
PREAI
errAshraf Maniyar; Subir Das; PSTN Srinivas; Pramod Kumar Tiwari
err分享
err收藏
Spin dynamics of germanium diluted ferrimagnetic spinel MnCo2O4锗稀释的铁磁性尖晶石MnCo2O4的自旋动力学
errJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
IF3
err2025-12-01
err0
PREAI
errSingha, A. D.; Pramanik, P.; Skoulatos, M.; Yadav, A.; Tiwari, P.; Sarkar, T.; Elkaim, E.; Fertey, P.; Thota, S.
err分享
err收藏
Design and performance assessment of dielectric modulated N + P + I N + P + feedback FET based biosensor基于介电调制N + P + I N + P + 反馈FET的生物传感器的设计与性能评估
errMicro and Nanostructures
IF3
err2025-11-14
err0
PREAI
errSubir Das; Jawar Singh; Pramod Kumar Tiwari
err分享
err收藏
Si/SiGe superlattice-based double gate feedback field-effect transistor and its application in 1T-DRAM基于Si/SiGe超晶格的双栅反馈场效应晶体管及其在1T-DRAM中的应用
errMICROELECTRONICS JOURNAL
IF2.3
err2025-11-01
err0
PREAI
errDas, Subir; Maniyar, Ashraf; Raj, Pushp; Singh, Jawar; Tiwari, Pramod Kumar
err分享
err收藏
Inelastic buckling of concrete-filled steel columns: a novel model混凝土填充钢柱的非弹性屈曲：一种新型模型
errWORLD JOURNAL OF ENGINEERING
IF1.6
err2025-10-01
err0
PREAI
errTiwari, Pramod; Jain, Kranti; Emani, Pavan Kumar; Negi, Bichitra Singh
err分享
err收藏
A Quasi-3D Model of Gate-Induced Drain Leakage Current of a Trapezoidal GAA MOSFET梯形GAA MOSFET的栅极诱导漏极泄漏电流的准三维模型
errJOURNAL OF ELECTRONIC MATERIALS
IF2.5
err2025-09-01
err0
PREAI
errSinha, Prity; Maniyar, Ashraf; Raj, Pushp; Tiwari, Pramod Kumar
err分享
err收藏
Simulation Study of Dielectric Modulated Dual Channel Trench Gate TFET-Based Biosensor介质调制双通道沟槽栅TFET生物传感器的仿真研究
errIEEE SENSORS JOURNAL
IF4.5
err2020-11-01
err65
PREAI
errKumar, Sandeep; Singh, Yashvir; Singh, Balraj; Tiwari, Pramod Kumar
err分享
err收藏
Analog and RF performance evaluation of negative capacitance SOI junctionless transistor
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2020-07-01
err10
PREAI
errMoparthi, Sandeep; Adarsh, K. P.; Tiwari, Pramod Kumar; Saramekala, Gopi Krishna
err分享
err收藏
Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2017-11-01
err21
PREAI
errSingh, Balraj; Rai, Trailokya Nath; Gola, Deepti; Singh, Kunal; Goel, Ekta; Kumar, Sanjay; Tiwari, Pramod Kumar; Jit, Satyabrata
err分享
err收藏
Analytical modeling of subthreshold characteristics by considering quantum confinement effects in ultrathin dual-metal quadruple gate (DMQG) MOSFETs
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2017-11-01
err4
PREAI
errSamoju, Visweswara Rao; Mahapatra, Kamalakanta; Tiwari, Pramod Kumar
err分享
err收藏
Analytical modeling of subthreshold characteristics of ultra-thin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2017-09-01
err15
PREAI
errKumar, Arun; Shushan, Shiv; Tiwari, Pramod Kumar
err分享
err收藏
A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate MOSFETs
errCHINESE PHYSICS LETTERS
IF4.2
err2014-12-05
err4
PREAI
errSamoju, Visweswara Rao; Jit, Satyabrata; Tiwari, Pramod Kumar
err分享
err收藏
Analog and radio-frequency (RF) performance evaluation of fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2014-12-01
err7
PREAI
errSaramekala, Gopi Krishna; Dubey, Sarvesh; Tiwari, Pramod Kumar
err分享
err收藏
A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2013-08-01
err18
PREAI
errSarangi, Santunu; Bhushan, Shiv; Santra, Abirmoya; Dubey, Sarvesh; Jit, Satyabrata; Tiwari, Pramod Kumar
err分享
err收藏
An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2013-08-01
err24
PREAI
errSaramekala, G. K.; Santra, Abirmoya; Dubey, Sarvesh; Jit, Satyabrata; Tiwari, Pramod Kumar
err分享
err收藏
Analytical models of subthreshold current and swing of short-channel strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2013-06-01
err10
PREAI
errKumar, Mirgender; Dubey, Sarvesh; Tiwari, Pramod Kumar; Jit, S.
err分享
err收藏
Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2012-05-01
err23
PREAI
errTiwari, Pramod Kumar; Dubey, Sarvesh; Singh, Kunal; Jit, S.
err分享
err收藏

研究方向

暂无研究方向
合作学者
合作期刊
S
Satyabrata Jit
H 指数: 40 · 论文数: 341
E
Erik Elkaı̈m
H 指数: 36 · 论文数: 221
J
Jawar Singh
H 指数: 27 · 论文数: 165
T
Tapati Sarkar
H 指数: 26 · 论文数: 138
S
Subhash Thota
H 指数: 25 · 论文数: 123
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