Carl‐Mikael Zetterling - Publications, H-index & Citations

Carl‐Mikael Zetterling

kth royal institute of technology

34H指数

277论文数

4.0K被引数

收录论文 18

发表时间

Enabling Monolithic SiC Power ICs: A Lateral PiN Diode Technology with Inter-Device Trench Isolation 实现单片SiC功率IC：一种具有器件间沟槽隔离的横向PiN二极管技术

Electronics

IF2.6

2026-05-19

OAAI

Xiaofan Ma; Mattias Ekström; Carl-Mikael Zetterling

SPICE Model for SiC Bipolar Transistor and TTL Inverter Degradation Due to Gamma Radiation SiC双极晶体管及TTL反相器因伽马辐射导致的SPICE模型退化

Micromachines 2025, Vol. 16, Page 1246

IF3

2025-10-31

OAAI

Alex Metreveli; Anders Hallén; Carl-Mikael Zetterling

(Ultra)wide-bandgap semiconductors for extreme environment electronics

APPLIED PHYSICS LETTERS

IF3.6

2025-03-01

PREAI

Chu, Rongming; Chen, Kevin; Zetterling, Carl-Mikael; Schrimpf, Ronald

SHM System for Composite Material Based on Lamb Waves and Using Machine Learning on Hardware

SENSORS

IF3.5

2024-12-06

OAAI

Batista, Gracieth Cavalcanti; Zetterling, Carl-Mikael; Oberg, Johnny; Saotome, Osamu

Self-aligned contacts to ion implanted S/D regions in 4H-SiC

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-12-01

OAAI

Ekstrom, Mattias; Zetterling, Carl-Mikael

500 °C SiC PWM Integrated Circuit

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2019-03-01

PREAI

Kargarrazi, Saleh; Elahipanah, Hossein; Saggini, Stefano; Senesky, Debbie; Zetterling, Carl-Mikael

Integrated circuits in silicon carbide for high-temperature applications

MRS BULLETIN

IF4.9

2015-05-08

PREAI

Zetterling, Carl-Mikael

Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

SCRIPTA MATERIALIA

IF5.6

2015-04-01

OAAI

Fashandi, H.; Andersson, M.; Eriksson, J.; Lu, J.; Smedfors, K.; Zetterling, C. -M.; Spetz, A. Lloyd; Eklund, P.

Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

APPLIED PHYSICS LETTERS

IF3.6

2011-01-28

OAAI

Buchholt, K.; Ghandi, R.; Domeij, M.; Zetterling, C-M.; Lu, J.; Eklund, P.; Hultman, L.; Spetz, A. Lloyd

Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2011-01-01

PREAI

Esteve, R.; Reshanov, S. A.; Savage, S.; Bakowski, M.; Kaplan, W.; Persson, S.; Schoner, A.; Zetterling, C. -M.

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

APPLIED PHYSICS LETTERS

IF3.6

2008-02-29

PREAI

Lee, H. -S.; Domeij, M.; Zetterling, C. -M.; Ostling, M.; Allerstam, F.; Sveinbjornsson, E. B.

Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor

APPLIED PHYSICS LETTERS

IF3.6

2003-11-10

PREAI

Koo, SM; Khartsev, S; Zetterling, CM; Grishin, A; Ostling, M

Ferroelectric Pb(Zr,Ti)O3/Al2O3/4H-SiC diode structures

APPLIED PHYSICS LETTERS

IF3.6

2002-07-29

PREAI

Koo, SM; Khartsev, SI; Zetterling, CM; Grishin, AM; Ostling, M

Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H-silicon carbide

APPLIED PHYSICS LETTERS

IF3.6

2000-09-04

PREAI

Lee, SK; Zetterling, CM; Danielsson, E; Östling, M; Palmquist, JP; Högberg, H; Jansson, U

Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2000-05-31

PREAI

Wang, LW; Huang, JP; Duo, XZ; Song, ZT; Lin, CL; Zetterling, CM; Östling, M

Ultradeep, low-damage dry etching of SiC

APPLIED PHYSICS LETTERS

IF3.6

2000-02-07

PREAI

Cho, H; Leerungnawarat, P; Hays, DC; Pearton, SJ; Chu, SNG; Strong, RM; Zetterling, CM; Östling, M; Ren, F

UV-ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

1999-04-01

PREAI

Zetterling, CM; Östling, M; Harris, CI; Wood, PC; Wong, SS

Influence of growth conditions on electrical characteristics of AlN on SiC

APPLIED PHYSICS LETTERS

IF3.6

1997-06-30

PREAI

Zetterling, CM; Ostling, M; Nordell, N; Schon, O; Deschler, M

研究方向