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M

M. Carrada

centre national de la recherche scientifique (cnrs)

H指数:22

被引数:1,670

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Atomic-scale and optical investigation of nanostructured Er disilicates in silica

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2022-12-010

OAAI

First down converter multilayers integration in an industrial Si solar cell process

PROGRESS IN PHOTOVOLTAICS

IF7.6

2018-09-049

OAAI

SiNx:Tb3+-Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process

SiNx:Tb3 -Yb3，一种与硅太阳能电池工艺兼容的高效下转换层

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2016-02-0135

OAAI

Structural analysis of the interface of silicon nanocrystals embedded in a Si3N4 matrix

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-05-3011

PREAI

Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

APPLIED PHYSICS LETTERS

IF3.6

2013-12-208

OAAI

Photoluminescence enhancement of silicon nanocrystals placed in the near field of a silicon nanowire

PHYSICAL REVIEW B

IF3.7

2013-08-1320

PREAI

Preventing the Degradation of Ag Nanoparticles Using an Ultrathin a-Al2O3 Layer as Protective Barrier

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2013-04-3044

PREAI

Si and Ge nanocrystals for future memory devices

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2012-12-0140

PREAI

SiOx/SiNy multilayers for photovoltaic and photonic applications

NANOSCALE RESEARCH LETTERS

IF4.1

2012-02-1418

OAAI

Si Nanocrystals Embedded in a Silicon Oxynitride Matrix

NANOMATERIALS AND NANOTECHNOLOGY

IF3.3

2011-10-063

OAAI

Ellipsometric demonstration of the existence of a strong correlation between size distribution and optical responses of silicon nanoclusters in a nitride matrix

APPLIED PHYSICS LETTERS

IF3.6

2011-09-274

PREAI

Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films

NANOSCALE RESEARCH LETTERS

IF4.1

2011-02-2838

OAAI

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

NANOSCALE RESEARCH LETTERS

IF4.1

2011-02-2821

OAAI

Photoluminescence characterization of few-nanocrystals electronic devices

JOURNAL OF LUMINESCENCE

IF3.6

2006-12-017

OAAI

Photoluminescence of Si nanocrystal memory devices obtained by ion beam synthesis

APPLIED PHYSICS LETTERS

IF3.6

2005-12-1328

PREAI

Absorption cross section and signal enhancement in Er-doped Si nanocluster rib-loaded waveguides -: art. no. 261103

APPLIED PHYSICS LETTERS

IF3.6

2005-06-2069

PREAI

Influence of Er concentration on the emission properties of Er-doped Si-rich silica films obtained by reactive magnetron co-sputtering

OPTICAL MATERIALS

IF4.2

2005-02-019

PREAI

Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS

APPLIED SURFACE SCIENCE

IF6.9

2004-06-0117

PREAI

Transmission electron microscopy measurements of the injection distances in nanocrystal-based memories

APPLIED PHYSICS LETTERS

IF3.6

2003-01-1325

PREAI

Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in SiO2

APPLIED PHYSICS LETTERS

IF3.6

2002-03-04130

PREAI