A. Sayari - Publications, H-index & Citations

A. Sayari

centre national de la recherche scientifique (cnrs)

12H指数

50论文数

384被引数

收录论文 10

发表时间

High pressure and polaron effects on optical properties of GaN wedge-shaped quantum dot

OPTICAL AND QUANTUM ELECTRONICS

IF4

2022-12-12

PREAI

Sayari, A.; Servatkhah, M.; Pourmand, R.

Theoretical study of excitons in GaAs quantum dot molecules obtained by nanoholes filling

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2021-03-01

PREAI

Tilouche, S.; Sayari, A.; Omri, M.; Souilem, S.; Sfaxi, L.; M'Ghaieth, R.

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

NANOSCALE RESEARCH LETTERS

IF4.1

2017-07-11

OAAI

Ezzedini, Maher; Hidouri, Tarek; Alouane, Mohamed Helmi Hadj; Sayari, Amor; Shalaan, Elsayed; Chauvin, Nicolas; Sfaxi, Larbi; Saidi, Faouzi; Al-Ghamdi, Ahmed; Bru-Chevallier, Catherine; Maaref, Hassen

Optical study of high index substrate effect in multilayer InAs/GaAs quantum dot solar cells

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2016-11-01

PREAI

Al-Ghamdi, M. S.; Sayari, A.; Sfaxi, L.

Effects of the graphene doping level on the optical and electrical properties of ITO/P3HT:Graphene/Au organic solar cells

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2014-12-01

PREAI

Bkakri, R.; Sayari, A.; Shalaan, E.; Wageh, S.; Al-Ghamdi, A. A.; Bouazizi, A.

Carrier gas and VI/II ratio effects on carbon clusters incorporation into ZnO films grown by MOCVD

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2013-06-01

PREAI

Marzouki, A.; Sayari, A.; Jomard, F.; Sallet, V.; Lusson, A.; Oueslati, M.

Improvement of performance of GaAs solar cells by inserting self-organized InAs/InGaAs quantum dot superlattices

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2013-06-01

PREAI

Sayari, A.; Ezzidini, M.; Azeza, B.; Rekaya, S.; Shalaan, E.; Yaghmour, S. J.; Al-Ghamdi, A. A.; Sfaxi, L.; M'ghaieth, R.; Maaref, H.

Residual strain and alloying effects on the vibrational properties of step-graded InxAl1-xAs layers grown on GaAs

JOURNAL OF LUMINESCENCE

IF3.6

2009-02-01

PREAI

Sayari, A.; Yahyaoui, N.; Meftah, A.; Sfaxi, A.; Oueslati, M.

Electronic confinement in a single GaAs quantum well probed by low-frequency resonant Raman scattering

PHYSICAL REVIEW B

IF3.7

1997-07-15

PREAI

Mlayah, A; Sayari, A; Grac, R; Zwick, A; Carles, R; Maaref, MA; Planel, R

Resonant Raman scattering in GaAs/AlAs superlattices: The role of electron state mixing

PHYSICAL REVIEW B

IF3.7

1996-02-15

PREAI

Mlayah, A; Carles, R; Sayari, A; Chtourou, R; Charfi, FF; Planel, R

研究方向