S. Dhar - Publications, H-index & Citations

S. Dhar

University of Calcutta

18H指数

101论文数

1.0K被引数

收录论文 19

发表时间

Automated Screening of Myocardial Infarction Based on Statistical Analysis of Photoplethysmographic Data

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT

IF5.9

2020-06-01

PREAI

Sadhukhan, Deboleena; Dhar, Sandipan; Pal, Saurabh; Mitra, Madhuchhanda

An efficient data compression and encryption technique for PPG signal

MEASUREMENT

IF5.6

2018-02-01

PREAI

Dhar, S.; Mukhopadhyay, S. K.; Pal, S.; Mitra, M.

Enhanced terahertz emission from Bi incorporated GaSb

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-01-24

PREAI

Vaisakh, C. P.; Bhowal, M. K.; Dhar, S.; Kini, R. N.

Exciton binding energy in GaAsBiN spherical quantum dot heterostructures

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-03-01

PREAI

Das, Subhasis; Dhar, S.

The influence of N and Bi on the band gap and sub-band interactions in a proposed material GaSb1-x-y NyBix/GaSb: a theoretical approach

JOURNAL OF MATERIALS SCIENCE

IF3.9

2017-01-20

PREAI

Das, Utsa; Dhar, S.

Calculation of Valence Band Structure and Band Dispersion in Indium containing III-V Bismides by k.p method

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2016-01-01

PREAI

Samajdar, D. P.; Das, T. D.; Dhar, S.

Influence of Bi-related impurity states on the bandgap and spin-orbit splitting energy of dilute III-V-Bi alloys: InPi1-XBiX, InAs1-XBiX, InSb1-XBiX and GaSb1-XBiX

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2016-01-01

PREAI

Samajdar, D. P.; Dhar, S.

Valence band anticrossing model for GaSb1-xBix and GaP1-xBix using k.p method

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2015-12-01

PREAI

Samajdar, D. P.; Das, T. D.; Dhar, S.

Dependence of heavy hole exciton binding energy and the strain distribution in GaAs1-xBix/GaAs finite spherical quantum dots on Bi content in the material

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2015-10-01

PREAI

Das, Subhasis; Sharma, Akant Sagar; Das, T. D.; Dhar, S.

Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2012-09-01

PREAI

de la Mare, M.; Zhuang, Q.; Dhar, S.; Krier, A.

Infrared absorption and Raman spectroscopy studies of InSbBi layers grown by liquid phase epitaxy

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2012-07-01

PREAI

Das, S. C.; Das, T. D.; Dhar, S.

Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2012-01-01

PREAI

Das, S. K.; Das, T. D.; Dhar, S.; de la Mare, M.; Krier, A.

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2011-07-15

OAAI

de la Mare, M.; Das, S. C.; Das, T. D.; Dhar, S.; Krier, A.

Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range

APPLIED PHYSICS LETTERS

IF3.6

2009-07-22

PREAI

de la Mare, M.; Zhuang, Q.; Krier, A.; Patane, A.; Dhar, S.

Properties of dilute InAsN layers grown by liquid phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2008-08-22

OAAI

Dhar, S.; Das, T. D.; de la Mare, M.; Krier, A.

Observation of a 0.7 eV electron trap in dilute GaAsN layers grown by liquid phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2004-08-09

PREAI

Dhar, S; Halder, N; Kumar, J; Arora, BM

Impurity reduction in In0.53Ga0.47As layers grown by liquid phase epitaxy using Er-treated melts

APPLIED PHYSICS LETTERS

IF3.6

2000-03-20

PREAI

Dhar, S; Paul, S; Kulkarni, VN

Atomic layer epitaxial predeposition for GaAs growth on Si

APPLIED PHYSICS LETTERS

IF3.6

1996-06-17

PREAI

Das, U; Dhar, S; Mazumdar, M

Electroless nickel plated contacts on porous silicon

APPLIED PHYSICS LETTERS

IF3.6

1996-03-04

PREAI

Dhar, S; Chakrabarti, S

研究方向