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Zhao Yan

changchun institute of applied chemistry

H指数:11

被引数:789

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COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS

IF5.4

2026-09-230

PRE

Effect of grain size and thermal annealing on the mechanical and superconducting properties of nanograined Nb-47wt.%Ti alloy

晶粒尺寸和热退火对纳米晶Nb-47wt.%Ti合金力学和超导性能的影响

Journal of Materials Science & Technology

IF14.3

2026-09-030

PRE

Epitaxial Integration of III–V Membrane Photodetectors With Lateral p–i–n Junctions on the Silicon-On-Insulator Waveguide Platform

在绝缘层上硅波导平台上外延集成III–V膜横向p–i–n结光电探测器

Laser & Photonics Reviews

IF10

2026-06-070

OA

Integration of InP membranes with embedded InGaAs quantum wells on silicon-on-insulator by tunnel epitaxy

通过隧穿外延技术将嵌入InGaAs量子阱的InP膜集成到绝缘体上硅基底上

IF2.8

2026-03-040

OA

Mid-infrared InAs/InP quantum-dot lasers

中红外InAs/InP量子点激光器

light: science & applications

IF0

2026-01-120

OAAI

Ultralow-threshold single-mode quantum-dot laser operating at O-band based on bound-states in the continuum

基于连续体中束缚态的O波段超低阈值单模量子点激光器

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2025-10-130

PRE

Electron Channeling Contrast Imaging for the Characterization of Dislocations in III-V Thin Films on Silicon (001)

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

IF1.9

2025-10-010

OAAI

Development of an advanced dual-probe fluorescence platform for sensitive and rapid detection of Porphyromonas gingivalis in saliva

开发一种先进的双探针荧光平台，用于对唾液中Porphyromonas gingivalis的敏感快速检测

sensors and actuators b chemical

IF0

2025-09-020

PRE

Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates

APPLIED PHYSICS LETTERS

IF3.6

2024-11-251

PRE

Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon

APPLIED PHYSICS LETTERS

IF3.6

2024-08-201

OA

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III-V lasers on silicon

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-02-292

OA

Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator

CRYSTAL GROWTH & DESIGN

IF3.4

2023-10-124

OAAI

Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

InP (001) 衬底上的长波长InAs/InAlGaAs量子点微盘激光器

APPLIED PHYSICS LETTERS

IF3.6

2023-03-152

OA

Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon-on-Insulator for Photonic Crystal Surface-Emitting Lasers

ADVANCED OPTICAL MATERIALS

IF7.2

2022-12-207

OAAI

High-performance III-V photodetectors on a monolithic InP/SOI platform

单片InP/SOI平台上的高性能iii-v光电探测器

IF8.5

2021-09-1438

OA

Selectively Grown III-V Lasers for Integrated Si-Photonics

JOURNAL OF LIGHTWAVE TECHNOLOGY

IF4.8

2021-02-1537

PREAI

Micrometer-scale InP selectively grown on SOI for fully integrated Si-photonics

APPLIED PHYSICS LETTERS

IF3.6

2020-08-0422

PREAI

III-V micro- and nano-lasers deposited on amorphous SiO2

APPLIED PHYSICS LETTERS

IF3.6

2020-04-274

PREAI

Bufferless 1.5 μm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms

IF8.5

2020-02-0363

OA

Flip-chip integration of tilted VCSELs onto a silicon photonic integrated circuit

IF3.3

2016-07-1175

OAAI