Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBiAPPLIED PHYSICS LETTERSIF3.62020-08-1110OAAI
Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice materialAPPLIED PHYSICS LETTERSIF3.62020-05-0838OAAI
Temperature-Dependent Minority-Carrier Mobility in p-Type InAs/GaSb Type-II-Superlattice PhotodetectorsPHYSICAL REVIEW APPLIEDIF4.42019-02-1924OAAI
Carrier concentration and transport in Be-doped InAsSb for infrared sensing applicationsINFRARED PHYSICS & TECHNOLOGYIF3.42019-01-015OAAI
Impact of proton-induced transmutation doping in semiconductors for space applicationsJOURNAL OF MATERIALS CHEMISTRY CIF5.12019-01-015OAAI
Mid-wavelength infrared unipolar nBp superlattice photodetectorINFRARED PHYSICS & TECHNOLOGYIF3.42018-01-0119OAAI
Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbxPHYSICAL REVIEW APPLIEDIF4.42017-09-2611OAAI
Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1-xSbx type-II superlatticesJOURNAL OF LUMINESCENCEIF3.62016-10-0136OAAI
Unipolar infrared detectors based on InGaAs/InAsSb ternary superlatticesAPPLIED PHYSICS LETTERSIF3.62016-07-1417OAAI
InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectorsAPPLIED PHYSICS LETTERSIF3.62016-01-1333PREAI
Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlatticesAPPLIED PHYSICS LETTERSIF3.62015-11-1737OAAI
Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometryAPPLIED PHYSICS LETTERSIF3.62015-02-1041PREAI
Carrier transfer from InAs quantum dots to ErAs metal nanoparticlesAPPLIED PHYSICS LETTERSIF3.62014-09-125PREAI
Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlatticesAPPLIED PHYSICS LETTERSIF3.62014-01-0710PREAI
Quantitative analysis of strain distribution in InAs/InAs1-xSbx superlatticesAPPLIED PHYSICS LETTERSIF3.62013-08-0819PREAI
Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxyAPPLIED PHYSICS LETTERSIF3.62013-02-2021OA
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSbAPPLIED PHYSICS LETTERSIF3.62011-12-22298OAAI
Luminescence coupling effects on multijunction solar cell external quantum efficiency measurementPROGRESS IN PHOTOVOLTAICSIF7.62011-11-3069PREAI
Structural and optical characterization of type-II InAs/InAs1-xSbx superlattices grown by metalorganic chemical vapor depositionAPPLIED PHYSICS LETTERSIF3.62011-08-1840OAAI
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