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T

T. K. Sharma

raja ramanna centre for advanced technology

19H指数
156论文数
1.3K被引数
收录论文 45
发表时间
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Identification of transition metals and their alloys using a synchrotron X-ray source and a MOVPE grown GaAs p-i-n detector利用同步加速器X射线源和MOVPE生长的GaAs p-i-n探测器识别过渡金属及其合金
errNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
IF1.4
err2025-11-01
err0
PREAI
errVashisht, Geetanjali; Taya, Payal; Kumar, Ravi; Trivedi, Ayushi; Tiwari, M. K.; Sharma, T. K.; Dixit, V. K.
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Identification of Surface, Interface, and Bulk States on the Pristine and Passivated InP (001) and (111) Surfaces Using Surface Photovoltage Spectroscopy利用表面光电压谱技术研究原始和钝化InP (001)和(111)表面的表面态、界面态和体态的识别
errPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
IF2
err2025-09-01
err0
errOAAI
errNimje, Deepesh; Vashisht, Geetanjali; Venus; Porwal, Sanjay; Banik, Soma; Gupta, Pooja; Sharma, Tarun Kumar; Dixit, Vijay Kumar
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Indian power sector decarbonization: Net-zero by 2050 or 2070印度电力部门脱碳: 净零2050年或2070
errENERGY FOR SUSTAINABLE DEVELOPMENT
IF4.9
err2025-04-01
err0
PREAI
errBisht, Arvind Singh; Sharma, Tarun
err分享
err收藏
Ultrafast carrier dynamics in InGaN quantum well channel based high electron mobility transistor structure
errJOURNAL OF LUMINESCENCE
IF3.6
err2025-03-01
err1
PREAI
errTaya, Payal; Khan, Salahuddin; Jayabalan, J.; Singh, Asha; Singh, Vikash K.; Dixit, Vijay K.; Sharma, Tarun K.
err分享
err收藏
Investigations on the effect of arsenic and phosphorus atomic exchange on the origin of crystal potential fluctuations in InAsP/InP epilayers
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-02-01
err1
PREAI
errVashisht, Geetanjali; Roychowdhury, R.; Rajput, P.; Kumar, R.; Trivedi, A.; Balal, M.; Bose, A.; Tiwari, M. K.; Barman, S. R.; Sharma, T. K.; Dixit, V. K.
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Impact of oxygen plasma power on the performance of Ga2O3 2 O 3 passivated GaN ultraviolet photodetectors氧等离子体功率对Ga2O3 2 O 3钝化GaN紫外探测器性能的影响
errAPPLIED SURFACE SCIENCE
IF6.9
err2024-11-01
err1
PREAI
errChatterjee, Abhishek; Agnihotri, Vishal; Porwal, S.; Khan, S.; Baraik, Kiran; Ganguli, Tapas; Bose, A.; Raghavendra, S.; Dixit, V. K.; Sharma, T. K.
err分享
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Full-zone optical spin injection in AlxGa1-xAs alloys
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2024-10-14
err0
PREAI
errMudi, Priyabrata; Khamari, Shailesh K.; Khan, S.; Zucchetti, Carlo; Bottegoni, Federico; Sharma, T. K.
err分享
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Effect of cap layer and post growth on-site hydride passivation on the surface and interface quality of InAsP/InP hetero and QW structures
errSURFACES AND INTERFACES
IF6.3
err2024-10-01
err1
PREAI
errVashisht, Geetanjali; Roychowdhury, R.; Kumar, R.; Porwal, S.; Bose, A.; Sharma, T. K.; Dixit, V. K.
err分享
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Identification and control of crystalline nuclei facets imparting to the breaking of symmetry selection rules of optical phonon modes in GaP/ Si (001)
errSURFACES AND INTERFACES
IF6.3
err2024-01-01
err1
errOAAI
errAggarwal, Rahul; Dixit, V. K.; Ingale, Alka A.; Roychowdhury, Rijul; Vashisht, Geetanjali; Sharma, T. K.
err分享
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Contribution of inter-valley scattering in governing the steady state optical spin orientation in Al x Ga1-x As
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2021-09-21
err1
PREAI
errMudi, Priyabrata; Khamari, Shailesh K.; Sharma, T. K.
err分享
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Signature of linear-in-k Dresselhaus splitting in the spin relaxation of X-valley electrons in indirect band gap AlGaAs
errPHYSICAL REVIEW B
IF3.7
err2021-09-09
err2
errOAAI
errMudi, Priyabrata; Khamari, Shailesh K.; Bhattacharya, Joydipto; Chakrabarti, Aparna; Sharma, Tarun K.
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Prediction of inverse spin Hall devices based on the direct injection of carriers in L-valley of GaAs
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2021-03-01
err2
PREAI
errMudi, Priyabrata; Khamari, Shailesh K.; Sharma, T. K.
err分享
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Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2020-12-01
err14
PREAI
errChatterjee, Abhishek; Khamari, Shailesh K.; Kumar, R.; Porwal, S.; Bose, A.; Sharma, T. K.
err分享
err收藏
Confirmation of the compensation of unintentional donors in AlGaN/GaN HEMT structures by Mg-doping during initial growth of GaN buffer layer
errJOURNAL OF LUMINESCENCE
IF3.6
err2020-03-01
err8
PREAI
errJana, Dipankar; Chatterjee, Abhishek; Sharma, T. K.
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Anisotropic magnetic properties of excitons in GaAs multiple quantum wells
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2020-01-01
err0
PREAI
errHaldar, S.; Banerjee, A.; Kumar, Kranti; Kumar, R.; Vashisht, Geetanjali; Sharma, T. K.; Dixit, V. K.
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On the determination of alloy composition using optical spectroscopy in MOVPE grown InGaN layers on Si(111)
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2019-10-01
err2
PREAI
errSingh, Vikash K.; Taya, Payal; Jana, Dipankar; Tyagi, Renu; Raghavan, S.; Sharma, T. K.
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Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy
errJOURNAL OF LUMINESCENCE
IF3.6
err2019-09-01
err7
PREAI
errKhamari, Shailesh K.; Mudi, P.; Porwal, S.; Sharma, T. K.
err分享
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Surface and interface properties of ZrO2/GaAs, SiO2/GaAs and GaP/GaAs hetero structures investigated by surface photovoltage spectroscopy
errAPPLIED SURFACE SCIENCE
IF6.9
err2019-05-01
err14
PREAI
errRoychowdhury, R.; Dixit, V. K.; Vashisht, Geetanjali; Sharma, T. K.; Mukherjee, C.; Rai, S. K.; Kumar, Shailendra
err分享
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A parallel magnetic field driven confinement versus separation of charges in GaAs quantum well investigated by magneto-photovoltage and magneto-photoluminescence spectroscopy
errJOURNAL OF LUMINESCENCE
IF3.6
err2019-02-01
err4
PREAI
errHaldar, S.; Banerjee, A.; Vashisht, Geetanjali; Porwal, S.; Sharma, T. K.; Dixit, V. K.
err分享
err收藏
A simple method to overcome the limitation of hybrid monochromator in the identification of peaks in the HRXRD pattern of Al0.4Ga0.6N/Al0.6Ga0.4N multi quantum wells
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2019-01-01
err0
PREAI
errSharma, T. K.; Kumar, R.; Sinha, A. K.; Pramanik, Pallabi; Sen, Sayantani; Bhattacharyya, A.
err分享
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研究方向

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