未登录

G

Guangwu Zhang

hong kong university of science and technology

H指数:5

被引数:88

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Programming asymmetric interfacial strain-electronic coupling for ultra-durable fast-charging sodium-ion storage

编程不对称界面应变-电子耦合以实现超耐久的快速充电钠离子存储

Chemical Engineering Journal

IF13.2

2026-09-140

PRE

Residual‑lithium-assisted ZrO2/Li3VO4 interphase reconstruction enables high electrochemical and thermal transport performances in all-solid-state lithium batteries

残余锂辅助的ZrO2/Li3VO4界面重构实现了全固态锂离子电池的高电化学和热输运性能

Chemical Engineering Journal

IF13.2

2026-07-310

PRE

Stabilizing all-day solar-radiative thermoelectric generation by reconfigurable thermal switching and dual phase-change storage

通过可重构热开关和双相变存储实现全天太阳能辐射热电发电的稳定化

IF11

2026-06-010

PRE

Coupling Se-Vacancy-Rich FeSe2/Bi2Se3 Heterojunction and Microhydration-Guided Water-in-Oil Electrolyte for Ultrahigh-Performance Hybrid-Ion Batteries

富硒空位FeSe2/Bi2Se3异质结与微水合引导的水-油电解质的耦合用于超高性能混合离子电池

IF9.1

2026-03-030

PRE

Strain-Gradient-Driven Decoupling of Thermal Suppression from Anisotropy in β-Ga2O3

Acta Materialia

IF9.3

2026-01-290

PRE

A Si-MoSe2 Heterostructured Anode with Enhanced Thermal Transport and Electrochemical Performance for Liquid and All-Solid-State Lithium-Ion Batteries

Si-MoSe2异质结构负极，具有增强的热传输和电化学性能，适用于液态和全固态锂离子电池

Advanced Science

IF14.1

2026-01-010

OAAI

Tailoring Thermal Transport in (Sc,Yb)AlN Thin Films to the Glassy Limit

调控 (Sc,Yb)AlN 薄膜的热输运至玻璃态极限

Acta Materialia

IF9.3

2025-11-260

PRE

Sodium Alginate/Erythritol/d-Mannitol Phase Change Materials for Long-Term Thermal Energy Storage and Controllable Release

海藻酸钠/赤藓糖醇/d-甘露醇相变材料用于长期热能储存与可控释放

IF4.3

2025-07-300

OA

Developing phase change materials for thermal energy storage using polyols with cold crystallization property

开发具有冷结晶特性的聚醇类相变材料用于热能存储

JOURNAL OF ENERGY STORAGE

IF9.8

2025-02-010

PRE

Machine learning-assisted investigation on the thermal transport of β-Ga2O3 with vacancy

JOURNAL OF CHEMICAL PHYSICS

IF3.1

2024-12-030

PRE

Probing the origin of abnormally strong electron-phonon interaction in phonon transport of semiconductor C3B monolayer

APPLIED SURFACE SCIENCE

IF6.9

2024-08-010

PRE

Revisiting four-phonon scattering in WS2 monolayer with machine learning potential

APPLIED PHYSICS LETTERS

IF3.6

2023-08-0110

PRE