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Yasushi Hoshino

kanagawa university

18H指数
285论文数
1.2K被引数
收录论文 23
发表时间
A novel mechanism of ultrathin SOI synthesis by extremely low-energy hot O+ implantation
err2016-07-19
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PREAI
errHoshino, Yasushi; Yachida, Gosuke; Inoue, Kodai; Toyohara, Taiga; Nakata, Jyoji
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Relationship between sound insulation performance of walls and word intelligibility scores
err2012-01-01
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errOAAI
errSato, Hayato; Morimoto, Masayuki; Hoshino, Yasushi; Odagawa, Yasuhiko
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Asymmetric line shapes for medium energy H and He ions undergoing a large-angle collision
err2008-11-07
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PREAI
errHazama, M.; Kitsudo, Y.; Nishimura, T.; Hoshino, Y.; Grande, P. L.; Schiwietz, G.; Kido, Y.
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Structure of an ultrathin aluminum oxide layer grown on a NiAl(110) substrate
err2008-02-25
err13
PREAI
errNishimura, T.; Hoshino, Y.; Okazawa, T.; Kido, Y.
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Growth of SiO2 on SiC by dry thermal oxidation:: mechanisms
err2007-10-05
err73
PREAI
errVickridge, I.; Ganem, J.; Hoshino, Y.; Trimaille, I.
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Atomic and electronic structures of an ultrathin Ni-deposited SiC(0001)-2X2 surface
err2005-12-16
err2
PREAI
errHoshino, Y; Matsubara, Y; Nishimura, T; Kido, Y
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Atomic structure of Si-rich 6H-SiC(000(1)over-bar)-2 X 2 surface富硅6H-SiC(000(1)over-bar)-2x2表面的原子结构
err2005-05-27
err9
PREAI
errHoshino, Y; Fukuyama, R; Matsubara, Y; Nishimura, T; Tanaka, S; Kohyama, M; Kido, Y
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Atomic and electronic structures of 6H-SiC(11(2)over-bar-0) -: art. no. 073308
err2003-08-29
err7
PREAI
errHoshino, Y; Matsumoto, S; Ogawa, K; Namba, H; Kido, Y
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Characterization and control of the HfO2/Si(001) interfaces
err2002-09-30
err81
PREAI
errHoshino, Y; Kido, Y; Yamamoto, K; Hayashi, S; Niwa, M
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Charge state of medium-energy He ions after large-angle single collisions
err2001-10-12
err7
PREAI
errKido, Y; Nishimura, T; Hoshino, Y; Toyoda, E; Nakada, T
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