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А. С. Фролов

Moscow Institute of Physics and Technology
H指数:9
被引数:348

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Built-in electric field and its origin at the (111)R surface of topological insulators GeBi4Te7 and MnBi4Te7

拓扑绝缘体GeBi4Te7和MnBi4Te7 (111)R表面的内建电场及其起源

2026-06-180
OAAI
Balance between efficiency and stability: Redox potential control by Ru(II) cyclometalated complexes for enhanced lithium-oxygen battery performance

效率与稳定性的平衡:通过Ru(II)环金属化配合物调控氧化还原电位以提升锂-氧电池性能

2026-05-180
PRE
Emergent Dirac fermions in graphene and underlying Au monolayer with two-dimensional ferrimagnetism

石墨烯和具有二维亚铁磁性的底层金单层中的Emergent Dirac fermions

2025-09-200
PRE
Magnetic Dirac semimetal state of (Mn,Ge)Bi2Te4
2024-06-053
OA
Ferromagnetic Layers in a Topological Insulator (Bi,Sb)2Te3 Crystal Doped with Mn

掺杂有Mn的拓扑绝缘体 (Bi,Sb)2Te3晶体中的铁磁层

2022-11-153
PRE
Atomic and Electronic Structure of a Multidomain GeTe Crystal
2020-11-0216
OAAI