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J

Jacob Steele

Cornell University
H指数:4
被引数:82

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A 7-eV bandgap semiconductor based on silicon-doped α-(AlxGa1−x)2O3

基于硅掺杂α-(AlxGa1−x)2O3的7-eV带隙半导体

Nature
IF48.5
2026-10-070
PRE
Adsorption-controlled growth of homoepitaxial c-plane sapphire films

同质外延c面蓝宝石薄膜的吸附控制生长

2024-09-112
OA
Silicon-doped β-Ga2O3 films grown at 1 μm/h by suboxide molecular-beam epitaxy
2023-04-0334
OA