A 7-eV bandgap semiconductor based on silicon-doped α-(AlxGa1−x)2O3基于硅掺杂α-(AlxGa1−x)2O3的7-eV带隙半导体NatureIF48.52026-10-070PRE
In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD systemAPPLIED PHYSICS LETTERSIF3.62024-12-101PRE
Adsorption-controlled growth of homoepitaxial c-plane sapphire films同质外延c面蓝宝石薄膜的吸附控制生长APL MATERIALSIF4.52024-09-112OA
Epitaxial growth of α-(AlxGa1-x)2O3 by suboxide molecular-beam epitaxy at 1 μm/hAPL MATERIALSIF4.52024-04-104OA
Silicon-doped β-Ga2O3 films grown at 1 μm/h by suboxide molecular-beam epitaxyAPL MATERIALSIF4.52023-04-0334OA