Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposureAPPLIED PHYSICS LETTERSIF3.62024-03-116PRE
Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy (vol 11, 111113,2023)APL MATERIALSIF4.52024-01-240OA
Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1-x)2O3 on m-plane α-Al2O3 by molecular beam epitaxyAPL MATERIALSIF4.52024-01-238OA
Growth of β-Ga2O3 and (sic)/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxyAPL MATERIALSIF4.52023-11-1314OA
Silicon-doped β-Ga2O3 films grown at 1 μm/h by suboxide molecular-beam epitaxyAPL MATERIALSIF4.52023-04-0334OA
Extending the Kinetic and Thermodynamic Limits of Molecular-Beam Epitaxy Utilizing Suboxide Sources or Metal-Oxide-Catalyzed EpitaxyPHYSICAL REVIEW APPLIEDIF4.42022-03-0818OA
Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphireAPPLIED PHYSICS LETTERSIF3.62021-08-0948PRE
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy (vol 9, 031101, 2021)APL MATERIALSIF4.52021-04-080OAAI
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxyAPL MATERIALSIF4.52021-03-0362OAAI
Intra- and inter-conduction band optical absorption processes in β-Ga2O3APPLIED PHYSICS LETTERSIF3.62020-08-1912OAAI
Significantly reduced thermal conductivity in β-(Al0.1Ga0.9)2O3/Ga2O3 superlatticesAPPLIED PHYSICS LETTERSIF3.62019-08-2727OAAI
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser depositionAPPLIED PHYSICS LETTERSIF3.62017-07-07165OAAI
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface chargeAPPLIED PHYSICS LETTERSIF3.62017-04-0486OAAI
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltageAPPLIED PHYSICS LETTERSIF3.62016-11-21338OAAI
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