Hajime Okumura - Publications, H-index & Citations

Hajime Okumura

kagoshima university

56H指数

815论文数

1.3W被引数

收录论文 66

发表时间

Network analysis of comprehensive concerns in patients with cancer: Differences between the sexes

ANNALS OF ONCOLOGY

IF65.4

2023-10-01

PREAI

Yamamoto, K.; Hashimoto, Y. Tanabe; Nonogaki, K.; Kono, H.; Toda, E.; Okumura, H.; Ozaki, H.; Kuno, M.; Watanabe, S.; Takemura, K.; Yamanaka, T.; Kizawa, R.; Yamaguchi, T.; Tanaka, K.; Kobayashi, Y.; Ogura, T.; Tamura-Hatano, N.; Kawabata, H.; Suyama, K.; Miura, Y.

Direct visualization of kinetic reversibility of crystallization and dissolution behavior at solution growth interface of SiC in Si-Cr solvent

SURFACES AND INTERFACES

IF6.3

2022-02-01

OAAI

Nakano, Kota; Maruyama, Shingo; Kato, Tomohisa; Yonezawa, Yoshiyuki; Okumura, Hajime; Matsumoto, Yuji

Influence of CMP damage induced during flattening SiC epitaxial layer on device performances

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2020-09-01

PREAI

Masumoto, Keiko; Senzaki, Junji; Hasegawa, Masaki; Ohira, Kentaro; Kojima, Kazutoshi; Kobayashi, Kenji; Okumura, Hajime

Difference in electron mobility at 4H-SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering

APPLIED PHYSICS LETTERS

IF3.6

2020-07-27

PREAI

Hirai, Hirohisa; Hatakeyama, Tetsuo; Sometani, Mitsuru; Okamoto, Mitsuo; Harada, Shinsuke; Okumura, Hajime; Yamaguchi, Hiroshi

Platinum additive impacts on vapor-liquid-solid growth chemical interface for high-quality SiC single crystal films

MATERIALS TODAY CHEMISTRY

IF6.7

2020-06-01

OAAI

Osumi, A.; Nakano, K.; Sannodo, N.; Maruyama, S.; Matsumoto, Y.; Mitani, T.; Kato, T.; Yonezawa, Y.; Okumura, H.

Development of 4H-SiC Schottky np diode with high blocking voltage and ultralow on-resistance

APPLIED PHYSICS LETTERS

IF3.6

2020-01-03

PREAI

Kojima, Kazutoshi; Okumura, Hajime

Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on (1(1)over-bar00) m-face and (11(2)over-bar0) a-face characterized by Hall effect measurements

APPLIED PHYSICS LETTERS

IF3.6

2019-09-26

PREAI

Hirai, Hirohisa; Hatakeyama, Tetsuo; Sometani, Mitsuru; Okamoto, Mitsuo; Harada, Shinsuke; Okumura, Hajime

Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

APPLIED PHYSICS LETTERS

IF3.6

2019-09-25

PREAI

Sometani, Mitsuru; Hosoi, Takuji; Hirai, Hirohisa; Hatakeyama, Tetsuo; Harada, Shinsuke; Yano, Hiroshi; Shimura, Takayoshi; Watanabe, Heiji; Yonezawa, Yoshiyuki; Okumura, Hajime

Composition dependence of transition temperatures on quaternary Co-Fe-Ni-Ga melt-spun alloys

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2018-10-01

PREAI

Okumura, H.; Saito, E.; Suzuki, H.

Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy

APPLIED PHYSICS LETTERS

IF3.6

2017-08-10

PREAI

Chinone, Norimichi; Nayak, Alpana; Kosugi, Ryoji; Tanaka, Yasunori; Harada, Shinsuke; Okumura, Hajime; Cho, Yasuo

Quantitative Analysis of Nanoscale Step Dynamics in High-Temperature Solution-Grown Single Crystal 4H-SiC via In Situ Confocal Laser Scanning Microscope

CRYSTAL GROWTH & DESIGN

IF3.4

2017-04-21

PREAI

Onuma, Aomi; Maruyama, Shingo; Komatsu, Naoyoshi; Mitani, Takeshi; Kato, Tomohisa; Okumura, Hajime; Matsumoto, Yuji

Observations of XCO2 and XCH4 with ground-based high-resolution FTS at Saga, Japan, and comparisons with GOSAT products

ATMOSPHERIC MEASUREMENT TECHNIQUES

IF3.3

2015-12-17

OAAI

Ohyama, H.; Kawakami, S.; Tanaka, T.; Morino, I.; Uchino, O.; Inoue, M.; Sakai, T.; Nagai, T.; Yamazaki, A.; Uchiyama, A.; Fukamachi, T.; Sakashita, M.; Kawasaki, T.; Akaho, T.; Arai, K.; Okumura, H.

A roadmap for future wide bandgap semiconductor power electronics

MRS BULLETIN

IF4.9

2015-05-08

PREAI

Okumura, Hajime

Effects of interface state density on 4H-SiC n-channel field-effect mobility (vol 104, 083516, 2014)

APPLIED PHYSICS LETTERS

IF3.6

2015-03-12

OAAI

Yoshioka, Hironori; Senzaki, Junji; Shimozato, Atsushi; Tanaka, Yasunori; Okumura, Hajime

Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

MATERIALS

IF3.2

2014-10-17

OAAI

Masumoto, Keiko; Asamizu, Hirokuni; Tamura, Kentaro; Kudou, Chiaki; Nishio, Johji; Kojima, Kazutoshi; Ohno, Toshiyuki; Okumura, Hajime

In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

APPLIED PHYSICS LETTERS

IF3.6

2014-07-29

PREAI

Chen, Bin; Chen, Jun; Yao, Yuanzhao; Sekiguchi, Takashi; Matsuhata, Hirofumi; Okumura, Hajime

The effect of melt-spinning processing parameters on crystal structure and magnetic properties in Fe-Mn-Ga alloys

INTERMETALLICS

IF4.8

2014-06-01

PREAI

Okumura, H.; Hashiba, E.; Nagata, K.

DIAL measurement of lower tropospheric ozone over Saga (33.24A° N, 130.29A° E), Japan, and comparison with a chemistry-climate model

ATMOSPHERIC MEASUREMENT TECHNIQUES

IF3.3

2014-05-21

OAAI

Uchino, O.; Sakai, T.; Nagai, T.; Morino, I.; Maki, T.; Deushi, M.; Shibata, K.; Kajino, M.; Kawasaki, T.; Akaho, T.; Takubo, S.; Okumura, H.; Arai, K.; Nakazato, M.; Matsunaga, T.; Yokota, T.; Kawakami, S.; Kita, K.; Sasano, Y.

Effects of interface state density on 4H-SiC n-channel field-effect mobility

APPLIED PHYSICS LETTERS

IF3.6

2014-02-24

PREAI

Yoshioka, Hironori; Senzaki, Junji; Shimozato, Atsushi; Tanaka, Yasunori; Okumura, Hajime

On recent (2008-2012) stratospheric aerosols observed by lidar over Japan

ATMOSPHERIC CHEMISTRY AND PHYSICS

IF5.1

2012-12-17

OAAI

Uchino, O.; Sakai, T.; Nagai, T.; Nakamae, K.; Morino, I.; Arai, K.; Okumura, H.; Takubo, S.; Kawasaki, T.; Mano, Y.; Matsunaga, T.; Yokota, T.

研究方向