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J

J. Chandrasekaran

Manchester Metropolitan University

H指数:42

被引数:5,656

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Optimizing sensitizer concentration from senna tora leaves for enhanced interfacial interactions in dye-sensitized solar cells

inorganic chemistry

IF5.4

2024-12-010

PRE

Influence of different molar concentration on the structural, optical, electrical and photo diode properties of MoO3 thin films

OPTICAL MATERIALS

IF4.2

2024-10-010

PRE

Synergetic effect of the SENSTIZER DERIVED from the flowers, leaves and stems of Senna auriculata for light HARVESTING and photogeneration in dye sensitized solar cell

JOURNAL OF THE INDIAN CHEMICAL SOCIETY

IF3.4

2024-07-011

PRE

Natural dye-sensitive solar cells (N-DSSCs) are fabricated using TiO2/1 wt% SrTiO3 as photoanodes

OPTICAL MATERIALS

IF4.2

2024-02-014

PRE

Effect of incorporation of La into WO3 nanorods for improving photocatalytic activity under visible light irradiation

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

IF4.9

2022-11-0129

PRE

Growth, spectral and quantum chemical investigation on hexamethylenetetramine 4-nitrophenol monohydrate single crystals for second harmonic generation and optical limiting applications

六亚甲基四胺4-硝基苯酚一水合物单晶的生长，光谱和量子化学研究，用于二次谐波的产生和光学限制应用

JOURNAL OF MOLECULAR STRUCTURE

IF4.7

2022-10-017

PRE

Fabrication of Cu/Y-MoO3/p-Si type Schottky barrier diodes by facile spray pyrolysis technique for photodetection application

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2022-03-0126

PRE

Inherent characteristics of ultra-photosensitive Al/Cu-CeO2/p-Si metal oxide semiconductor diodes

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-018

PRE

Effect of Ti on microstructural and optoelectrical characteristics of Ti-CdO NPs prepared with microwave irradiation techniques for application of the n-TiCdO/p-Si photodetector

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2021-12-016

PREAI

Incorporation of Zn ions on high dielectric HfO2 thin films by spray pyrolysis and fabrication of Al/Zn@HfO2/n-Si Schottky barrier diodes

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2021-11-0120

PREAI

Development of n-MoO3@MoS2/p-Si heterostructure diode using pre-synthesized core@shell nanocomposite for efficient light harvesting detector application

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2021-11-019

PREAI

Influence of Cu Irons on Structural, Optical, and Electrical Properties of Pure WS2 Thin Films and Development of p-Si/n-Cu@WS2 Photodiode for Optoelectronic Application

JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS

IF4.9

2021-10-034

PREAI

Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application

JOURNAL OF SOLID STATE CHEMISTRY

IF3.5

2021-09-0149

PREAI

Improved photodetector performance of high-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes

SURFACES AND INTERFACES

IF6.3

2021-08-0140

PREAI

Fabrication of WO3 nanorods/RGO hybrid nanostructures for enhanced visible-light-driven photocatalytic degradation of Ciprofloxacin and Rhodamine B in an ecosystem

WO3纳米棒/RGO杂化纳米结构的制备，用于在生态系统中增强可见光驱动的环丙沙星和罗丹明b的光催化降解

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2021-07-0170

PREAI

WO3/CoWO4 nanocomposite synthesis using a facile co-precipitation method for enhanced photocatalytic applications

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

IF4.9

2021-07-0127

PREAI

Nitrogen doped 2D graphene/Zn3V2O8 nanocomposite with enhanced supercapacitive features

SURFACES AND INTERFACES

IF6.3

2021-06-0116

PREAI

Enhancing of Al/Sn-HfO2/n-Si (MIS) Schottky barrier diode performance through the incorporation of Sn ions on high dielectric HfO2 thin films formed by spray pyrolysis

JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS

IF4.9

2021-04-273

PREAI

Synthesis of Single-Phase MoO3-Nanoparticles Using Various Acids for the Fabrication of n-MoO3/p-Si Junction Diode

JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS

IF4.9

2021-04-178

PREAI

Fabrication and characterization of p-Si/n-In2O3 and p-Si/n-ITO junction diodes for optoelectronic device applications

用于光电器件应用的p-si/n-In2O3和p-si/n-ito结二极管的制备和表征

SURFACES AND INTERFACES

IF6.3

2021-04-0117

PREAI