Masao Nagase - Publications, H-index & Citations

Masao Nagase

tokushima university

37H指数

294论文数

5.0K被引数

收录论文 17

发表时间

Biosensing beyond Debye screening length using epitaxial graphene field-effect transistors on SiC substrate 在SiC衬底上使用外延石墨烯场效应晶体管进行超出德拜筛选长度的生物传感

SURFACES AND INTERFACES

IF6.3

2024-11-01

PREAI

Murayama, Keita; Furukawa, Chikato; Yamasaki, Sota; Ohno, Yasuhide; Kajisa, Taira; Nagase, Masao

Energy Harvesting of Deionized Water Droplet Flow over an Epitaxial Graphene Film on a SiC Substrate

MATERIALS

IF3.2

2023-06-12

OAAI

Ohno, Yasuhide; Shimmen, Ayumi; Kinoshita, Tomohiro; Nagase, Masao

Ion sensitivity of large-area epitaxial graphene film on SiC substrate

APPLIED PHYSICS LETTERS

IF3.6

2017-11-21

PREAI

Mitsuno, Takanori; Taniguchi, Yoshiaki; Ohno, Yasuhide; Nagase, Masao

Stability and reactivity of steps in the initial stage of graphene growth on the SiC(0001) surface

PHYSICAL REVIEW B

IF3.7

2013-12-03

PREAI

Kageshima, Hiroyuki; Hibino, Hiroki; Yamaguchi, Hiroshi; Nagase, Masao

Carrier transport mechanism in graphene on SiC(0001)

PHYSICAL REVIEW B

IF3.7

2011-09-27

PREAI

Tanabe, Shinichi; Sekine, Yoshiaki; Kageshima, Hiroyuki; Nagase, Masao; Hibino, Hiroki

Epitaxial few-layer graphene: towards single crystal growth

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2010-09-02

104

PREAI

Hibino, H.; Kageshima, H.; Nagase, M.

Stacking domains of epitaxial few-layer graphene on SiC(0001)

PHYSICAL REVIEW B

IF3.7

2009-08-06

PREAI

Hibino, H.; Mizuno, S.; Kageshima, H.; Nagase, M.; Yamaguchi, H.

Origin of ferromagnetism of MnSi1.7 nanoparticles in Si:: First-principles calculations

PHYSICAL REVIEW B

IF3.7

2008-07-11

PREAI

Yabuuchi, Shin; Kageshima, Hiroyuki; Ono, Yukinori; Nagase, Masao; Fujiwara, Akira; Ohta, Eiji

Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons

PHYSICAL REVIEW B

IF3.7

2008-02-15

336

OAAI

Hibino, H.; Kageshima, H.; Maeda, F.; Nagase, M.; Kobayashi, Y.; Yamaguchi, H.

Preparation and characterization of a microfabricated oxide-on-oxide catalyst of α-Sb2O4/VSbO4

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN

IF3.8

2005-03-11

PREAI

Ohminami, Y; Suzuki, S; Matsudaira, N; Nomura, T; Chun, WJ; Ijima, K; Nakamura, M; Mukasa, K; Nagase, M; Asakura, K

X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process

APPLIED PHYSICS LETTERS

IF3.6

2005-02-07

PREAI

Shimura, T; Yasutake, K; Umeno, M; Nagase, M

Mechanism of bright selective imaging of single-walled carbon nanotubes on insulators by scanning electron microscopy

APPLIED PHYSICS LETTERS

IF3.6

2004-03-08

126

PREAI

Homma, Y; Suzuki, S; Kobayashi, Y; Nagase, M; Takagi, D

Single-electron devices formed by thermal oxidation

JOURNAL OF ELECTROANALYTICAL CHEMISTRY

IF4.1

2003-11-01

PREAI

Nagase, M; Horiguchi, S; Shiraishi, K; Fujiwara, A; Takahashi, Y

Evolution of step-terrace structure at Si-SiO2 interface in SIMOX substrate during annealing 退火过程中SIMOX衬底Si-SiO2界面台阶结构的演变

APPLIED SURFACE SCIENCE

IF6.9

2002-05-01

PREAI

Ishiyama, T; Nagase, M; Omura, Y

Si complementary single-electron inverter with voltage gain

APPLIED PHYSICS LETTERS

IF3.6

2000-05-22

PREAI

Ono, Y; Takahashi, Y; Yamazaki, K; Nagase, M; Namatsu, H; Kurihara, K; Murase, K

Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films

APPLIED PHYSICS LETTERS

IF3.6

1997-10-20

134

PREAI

Yamaguchi, T; Namatsu, H; Nagase, M; Yamazaki, K; Kurihara, K

Fabrication of 2-nm-wide silicon quantum wires through a combination of a partially-shifted resist pattern and orientation-dependent etching

APPLIED PHYSICS LETTERS

IF3.6

1997-02-03

PREAI

Namatsu, H; Kurihara, K; Nagase, M; Makino, T

研究方向