Huanglong Li

tsinghua university

H指数:30

被引数:5,815

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Symbolic Reservoir Computing within Memristive Crossbar Arrays as a Cellular Automata

基于忆阻器交叉阵列的符号存储器计算作为细胞自动机

Advanced Intelligent Systems

IF6.1

2025-12-120

OAAI

Temporal Dynamics Makes Memristive Physical Unclonable Functions More Secure and Ultra-Lightweight

时序动态使忆阻器物理不可克隆函数更安全且超轻量级

Advanced Electronic Materials

IF5.3

2025-11-070

OAAI

Symbolic Reservoir Computing within Memristive Crossbar Arrays as a Cellular Automata

基于忆阻器交叉阵列的符号化存储器计算作为细胞自动机

Advanced Intelligent Systems

IF6.1

2025-08-080

OAAI

Bio-realistic and versatile artificial dendrites made of anti-ambipolar transistors

生物真实且通用的由反双极性晶体管构成的人工树突

Neuromorphic Computing and Engineering

IF6.1

2025-06-190

PRE

A Te-based memristor with short-term depression behavior

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2025-04-280

PRE

Nanosecond Phase-Transition Dynamics in Elemental Tellurium

ADVANCED FUNCTIONAL MATERIALS

IF19

2024-08-290

PRE

Generative complex networks within a dynamic memristor with intrinsic variability

NATURE COMMUNICATIONS

IF15.7

2023-10-0210

OAAI

LiNbO3 dynamic memristors for reservoir computing

FRONTIERS IN NEUROSCIENCE

IF3.2

2023-04-111

OAAI

A steep-slope tellurium transistor with a native voltage amplifying threshold switch

APPLIED PHYSICS LETTERS

IF3.6

2022-06-0110

PRE

A Sustainable Multipurpose Separator Directed Against the Shuttle Effect of Polysulfides for High-Performance Lithium-Sulfur Batteries

针对高性能锂硫电池的多硫化物穿梭效应的可持续多用途隔膜

ADVANCED ENERGY MATERIALS

IF26

2022-04-08104

PRE

Internal reverse-biased p-n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory

APPLIED PHYSICS LETTERS

IF3.6

2022-02-181

Ferroelectric-HfO2/oxide interfaces, oxygen distribution effects, and implications for device performance

APPLIED PHYSICS LETTERS

IF3.6

2022-01-049

Twist-angle-controlled neutral exciton annihilation in WS2 homostructures

NANOSCALE

IF5.1

2022-01-015

PRE

A new opportunity for the emerging tellurium semiconductor: making resistive switching devices

NATURE COMMUNICATIONS

IF15.7

2021-10-1939

OAAI

A Marr's Three-Level Analytical Framework for Neuromorphic Electronic Systems

Marr的神经形态电子系统三级分析框架

ADVANCED INTELLIGENT SYSTEMS

IF6.1

2021-07-265

OAAI

Grain-Boundary Engineering of Monolayer MoS2 for Energy-Efficient Lateral Synaptic Devices

用于节能的侧突触器件的单层MoS2的晶界工程

ADVANCED MATERIALS

IF26.8

2021-07-0480

PREAI

Top-Down Synthesis of Noble Metal Particles on High-Entropy Oxide Supports for Electrocatalysis

在高熵氧化物载体上自上而下合成贵金属颗粒用于电催化

CHEMISTRY OF MATERIALS

IF7

2021-02-22120

PREAI

Rugged High-Entropy Alloy Nanowires with in Situ Formed Surface Spinel Oxide As Highly Stable Electrocatalyst in Zn-Air Batteries

具有原位形成的表面尖晶石氧化物的坚固的高熵合金纳米线在Zn-空气电池中作为高度稳定的电催化剂

ACS MATERIALS LETTERS

IF8.7

2020-11-23143

PREAI

Anchoring Mo single atoms/clusters and N on edge-rich nanoporous holey graphene as bifunctional air electrode in Zn - air batteries

将Mo单原子/团簇和N锚定在富边纳米多孔石墨烯上作为锌-空气电池中的双功能空气电极

APPLIED CATALYSIS B-ENVIRONMENTAL

IF20.3

2020-11-0193

PREAI

MOF-Derived 2D/3D Hierarchical N-Doped Graphene as Support for Advanced Pt Utilization in Ethanol Fuel Cell

MOF衍生的2D/3D分层N掺杂石墨烯作为乙醇燃料电池中先进Pt利用的支持

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-10-0832

PREAI

Huanglong Li

个人简介

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