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朱思聪 (Sicong Zhu)

wuhan university of science and technology副教授

H指数:19

被引数:1,257

个人简介

副教授。学术兼职为Diamond & Related Materials, Results in Physics等多个学术期刊审稿人。一级学科为物理学、材料科学与工程，二级学科为凝聚态物理、材料物理与化学。研究方向为二维层状材料铁电铁磁性能预测、多功能隧道结输运性质研究、低维光电材料性能研究。教育经历：2006-09至2013-06，华中科技大学（原文截断，仅此信息）。

教育背景

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工作经历

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荣誉奖项

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Delocalized spin-polarized electrons enhance the performance of ion batteries

离域自旋极化电子增强了离子电池的性能

Journal of Materials Chemistry A

IF9.5

2026-06-010

PRE

Energy level-dependent tunneling magnetoresistance based on two-dimensional noncollinear antiferromagnet

基于二维非共线反铁磁体的能级依赖隧穿磁阻

Journal of Physics D: Applied Physics

IF3.2

2026-03-260

PRE

Symmetry Breaking and Reinforcement-Induced Non-Alter Spin Splitting in Antiferromagnet for Low-Power and High-Density Memory

IF9.1

2026-02-030

PRE

Defect-engineered monolayer TlBiSe3 for self-powered polarization detection and reconfigurable spin encoding

Physica Scripta

IF2.6

2026-01-150

PRE

Active Tuning of Light-Induced Fully Spin-Polarized Current via Inversion Symmetry Breaking

通过反演对称性破缺主动调节光诱导完全自旋极化电流

IF6.7

2025-10-010

PRE

Investigation of Thermoelectric Properties in Altermagnet RuO2

Altermagnet RuO2的热电性质研究

IF0

2025-07-290

OA

Near-infrared Polarization Modulation of Photonic Devices by Ferroelectric Polarization

铁电极化调控光子器件的近红外偏振

IF6.7

2025-05-020

PRE

Enhanced tunnel electroresistance in BAs/In2S3 ferroelectric tunnel junction through ferroelectric control of band alignments

通过铁电控制能带对齐，在BAs/In₂S₃铁电隧穿结中增强隧穿电致电阻效应

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2025-05-010

PRE

Fully Electronically Controlled High-Efficiency Multiferroic Tunnel Junctions Composed of Bilayer CuCrSe2 with Anti-ferromagnetic and Anti-ferroelectric Properties

全电子控制的高效双功能铁电隧道结，由具有反铁磁和反铁电特性的双层CuCrSe2组成

ACS APPLIED NANO MATERIALS

IF5.5

2025-04-300

PRE

Surface spin engineering of InBiSe3 enabled self-powered polarization-sensitive photodetector

InBiSe3自供电偏振敏感光电探测器的表面自旋工程

APPLIED SURFACE SCIENCE

IF6.9

2025-03-010

PRE

Giant tunneling magnetoresistance in insulated altermagnet/ferromagnet junctions induced by spin-dependent tunneling effect

自旋相关隧穿效应引起的绝缘altermagnet/铁磁体结中的巨隧穿磁阻

PHYSICAL REVIEW B

IF3.7

2024-10-233

PRE

Strategy to enhance the performance of spin field effect transistors-insert effective intermediate layer graphene

提升自旋场效应晶体管性能的策略 -- 插入有效中间层石墨烯

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-09-090

OA

Spin-correlation transport and multiple resistive states in multiferroic tunnel junctions

PHYSICAL REVIEW B

IF3.7

2024-07-250

PRE

Electronic Delocalization Engineering of β-AsP Enabled High-Efficient Multisource Logic Nanodevices

ADVANCED FUNCTIONAL MATERIALS

IF19

2024-05-130

OAAI

Short-Wave Infrared Photodetectors Based on β-In2Se3/Te Heterojunctions for Optical Communication and Polarimetric Imaging Applications

基于 β-In2Se3/Te异质结的短波红外光电探测器，用于光通信和偏振成像应用

ADVANCED FUNCTIONAL MATERIALS

IF19

2024-02-2317

PRE

Spin transport of half-metal Mn2X3 with high Curie temperature: An ideal giant magnetoresistance device from electrical and thermal drives

居里温度高的半金属Mn2X3的自旋传输: 电和热驱动的理想巨磁阻器件

FRONTIERS OF PHYSICS

IF5.3

2024-01-053

PRE

Perovskite CsCu2I3-based optoelectronic device with exceptional polarization sensitivity via point vacancy modulation

APPLIED PHYSICS LETTERS

IF3.6

2023-10-273

PRE

Low Threshold and Robust Ultrafast Pulses from Freestanding-Growth 2D Quaternary BiCuSeO

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-09-086

PRE

Designing and Development of AsP-GeY (S; Se) In-Plane and van der Waals Heterojunction-Based Photonic Devices for Wavelength Tuning

IF6.7

2023-09-070

PRE

Substitution behavior of Cu doped into Fe3Si and its effect on the electronic structure and mechanical properties based on first-principles calculation

基于第一性原理计算的Cu掺杂Fe3Si的取代行为及其对电子结构和力学性能的影响

IF4.8

2023-09-014

PRE