.png){kind=icon}
返回
2D Memory Enabled by Electrical Stimulation-Induced Defect Engineering for Complicated Neuromorphic Computing
.png){kind=icon}
PRE
AI
DOI：10.1002/adfm.202416333.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
Defect engineering is extensively utilized in 2D memory devices due to its effectiveness in enhancing charge-trapping ability. However, conventional defect modulation techniques usually introduce only single types of carrier traps and cannot reconfigure trap types and densities after device fabrication. Here, for the first time, electrical stimulation-driven long-range migration of Cu ions within CuInP2S6 (CIPS) films is demonstrated to simultaneously introduce both electron and hole traps and enable reconfigurable modulation of interfacial defect trapping. This process is referred to as electrical stimulation-induced defect engineering. By integrating these defect traps and the dual-gate coupling effect, the memory window-to-scan range (MW/S.R) ratio, which reflects the device's charge trapping ability, doubled and peaked at 78.1% at Vbg = +/- 80 V. Additionally, the dual-gate memory device based on the graphene/CIPS/h-BN/WSe2 heterostructure exhibits a maximum on/off ratio reaching 107 for multi-level storage states, integrating neuromorphic computing and logic operations within a single platform. With 81 storage states and paired-pulse facilitation (PPF), it achieves approximate to 90% accuracy in reservoir computing (RC) simulations. These results highlight the potential of electrical stimulation-induced defect engineering for next-generation electronics.
Keyword:
charge-trapping
CuInP2S6
defect engineering
dual-gate coupling effect
neuromorphic computing
nonvolatile storage
期刊
IF:
19
论文数:
3.5W
被引数:
32.1W
机构
引用论文
Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions用于范德华铁电异质结中的非易失性存储器和可编程整流器的栅极耦合启用的鲁棒磁滞.png)
ADVANCED MATERIALS
ADVANCED MATERIALSIF26.8
PREAI
分享收藏Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band基于碲的2D范德华异质结构实现的电子/光电存储器件，用于光通信波段的传感器内储层计算ADVANCED MATERIALS
ADVANCED MATERIALSIF26.8
PREAI
分享收藏Reservoir computing using dynamic memristors for temporal information processing使用动态忆阻器进行时间信息处理的储层计算NATURE COMMUNICATIONS
OAAI
NATURE COMMUNICATIONSIF15.7
OAAI分享收藏分享收藏Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing用于内存计算的基于铁电可重构晶体管的内容可寻址存储器和可转换逻辑电路ACS NANO
OAAI
ACS NANOIF16
OAAI分享收藏Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices原子锐利的接口使能超高速非易失性存储器件NATURE NANOTECHNOLOGYOAAI
NATURE NANOTECHNOLOGYIF34.9
OAAI分享收藏Cross-Modulated Amplitudes and Frequencies Characterize Interacting Components in Complex Systems
PREAI
分享收藏
查看更多内容