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A 1.8-kV Normally-Off Al-Rich AlGaN Channel HEMTs Featuring a Recessed Gate and Superlattice Structure
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DOI：10.1109/ted.2026.3708421.png)
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Abstract
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This work reports a normally-off Al-rich (Al > 60%) AlGaN channel high-electron-mobility transistor (HEMT) employing a recessed-gate metal–insulator–semiconductor (MIS) architecture and an AlN/AlGaN superlattice (SL) buffer. The device achieves a threshold voltage of +4.7 V, an <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small>-resistance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1470~\Omega \cdot $ </tex-math></inline-formula>mm, and a breakdown voltage (BV) of 1.8 kV at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\textit {gd}} = 25~\mu $ </tex-math></inline-formula>m without field plates. To identify the origin of the elevated <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small>-resistance, systematic transfer length method (TLM) and multifrequency capacitance–voltage (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$C$ </tex-math></inline-formula>–<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula>) analyses were performed in comparison with a co-fabricated depletion-mode reference device. TLM analysis reveals a fourfold increase in access-region sheet resistance after gate recess, establishing plasma-induced damage as the primary resistance bottleneck rather than intrinsic material limitations. Multifrequency <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$C$ </tex-math></inline-formula>–<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula> analysis further shows that the recess process introduces a high density of slow border traps (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim$ </tex-math></inline-formula><inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$ 3\times 10^{{13}}$ </tex-math></inline-formula> cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-{2}}$ </tex-math></inline-formula>eV<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-{1}}\text {)}$ </tex-math></inline-formula>, leading to pronounced low-frequency dispersion and hysteresis, while fast interface states remain comparable to the reference device. These results establish a quantitative process–performance baseline for E-mode Al-rich AlGaN HEMTs and identify low-damage etching as a critical path toward improved device performance.
Keywords:
AlGaN channel
breakdown voltage (BV)
enhancement-mode
high-electron-mobility transistor (HEMT)
normally-off
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3.2
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685
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3.7W
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