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IEEE Transactions on Electron Devices cover

IEEE Transactions on Electron Devices

IF3.2
Papers725
Citations36717
Journal Papers 725
Publication Date
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UV-Induced Surface Aminolysis of Liquid Crystal Polymer for Quasihermetic Packaging
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-09-07
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deleteXin Tang; Ran Lu; Lin Cui; Xianxing Ju; Jiaqi Ni; Yanyan Xu; Qing Wang; Mingxiang Chen
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A 950 °C-Thermal-Budget-Compatible Al2O3-Embedded Hf0.5Zr0.5O2 Poly-Si Channel- Last FeFET for 3-D NAND Applications
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IF3.2
delete2026-09-07
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deleteWenbo Fan; Xiaoyu Ke; Yajing Ding; Xianzhou Shao; Saifei Dai; Tao Hu; Runhao Han; Min Liao; Xinpei Jia; Fengbin Tian; Tingting Li; Bo Tang; Junshuai Chai; Hao Xu; Qing Luo; Xiaolei Wang; Wenwu Wang; Tianchun Ye
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Fabrication and Experimental Test of Low-Loss Waveguide Mode Converters for 0.34-THz Vacuum Electron Devices
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IF3.2
delete2026-08-18
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deleteGuo Guo; Zeyuan Yang; Haofei Li; Fei Shen; Yanyu Wei
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Floating-Gate IGZO Thin-Film Transistor Employing Split-Gate to Enable Tunable Subthreshold Swing for AMOLED Pixel Circuits
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IF3.2
delete2026-08-17
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deleteSunyeol Bae; Hyung-Jun Noh; Yumin Yun; Chae-Hwan Park; Junhyeong Park; Soo-Yeon Lee
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Doping-Engineered Performance Tuning of Si-SPADs in a 40-nm BSI Technology
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-12
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deleteTiancai Wang; Chunxu Song; Hongling Peng; Chuanwang Xu; Liang Wang; Man Hu; Peng Cao; Jiaqi Wei; Mingming Li; Wanhua Zheng
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Monolithic 3-D Stackable DRAM With Oxide-Channel- Access Transistors: Density Scaling Through Dual-Deck Stacking and Multilevel Cell
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-12
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deletePo-Kai Hsu; Sungwon Cho; Janak Sharda; Kiseok Lee; Hyeonwoo Park; Suman Datta; Shimeng Yu
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On the Study of Dynamic Power Dissipation and Switching Speed of Inkjet-Printed RF MoS2 Nonvolatile Switches for Wireless IoT Applications
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-11
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deleteZirui Zhang; Zixing Peng; Xiaoyu Xiao; Xianyue Liao; Xiaobang Shang; Cinzia Casiraghi; Zhirun Hu
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Improvement of Reverse Recovery Characteristic by Extra Etching in Source Electrode for Superjunction MOSFET
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-10
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deletePing Li; Juan Luo; Rongyao Ma; Wei Zeng; Tao Zhong; Zequ Han; Hao Zhong; Shengdong Hu; Zhi Lin
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Guest Editorial: T-ED Special Issue on Reliability of Advanced Nodes
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IF3.2
delete2026-08-10
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deleteFrancesco Maria Puglisi; Zakariae Chbili
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High-Responsivity ReMoS2 Photodetector on Gallium Nitride Patterned Substrate for Visible-Light Image Sensing and Communication Applications
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-07
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deleteBing Jiang; Jun He; Jiachang Guo; Xue Fan; Chengcan Chen; Yunfang Wang; Xiaohua Li; Hezhou Liu; Xinke Liu
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Analysis of Trap-Induced Dynamic Degradation in AlGaN/GaN Gated-Edge Termination Schottky Barrier Diodes Under Continuous Switching Operation
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-06
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deleteZhen-Hong Huang; Benoit Bakeroot; Olga Syshchyk; Ching-Chia Lee; Yu-Teng Tso; Pei-Jung Wang; Dirk Wellekens; Niels Posthuma; Sheng-Shiuan Yeh; Stefaan Decoutere; Tian-Li Wu
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Synergistic Effects of Oxygen Annealing and Low-Fluence Kr Ion Irradiation on 4H-SiC and β-Ga2O3
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-05
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deleteYuhao Wang; Yun Li; Chenglin Liao; Weihao Lin; Zhimei Yang; Min Gong; Mingmin Huang; Yao Ma; Gang Xiang
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Crystalline InGaO TFT Rectifier With Conversion Efficiency Higher Than 90% for RFID Application
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-05
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deleteSunaina Priyadarshi; Md. Hasnat Rabbi; Taebin Lim; Seongcheol Moon; Niels van Fraassen; Nathan Harrison; Abhishek Chandramohan; Feras Alkhalil; Jin Jang
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Toward Understanding Threshold Voltage Shift Induced by Gate-to-Sinker Spacing Scaling in 12 V n-LDMOSFET
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IF3.2
delete2026-08-05
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deleteChing-Huei Tsai; Jian-Bin Shiu; Shuenn-Jeng Chen; Yi-Min Jen; Tian-Li Wu
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Design and Fabrication of a WLP-Packaged Ultrawideband BAW Filter Based on Al0.7Sc0.3N Film With Cap-Wafer IPD Matching Inductors
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-05
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deleteDanyu Mu; Weipeng Xuan; Gang Liu; Rui Ding; Feng Gao; Hao Jin; Jikui Luo; Shurong Dong
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Modeling of Electrochromic Devices: A Physics-Based Equivalent Circuit Approach
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IF3.2
delete2026-08-04
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deleteS. J. Alankrith; Tanushree H. Choudhury; Revathy Padmanabhan
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Design and Fabrication of a 7-GHz Bandpass Filter Based on Solidly Mounted A1-Mode LiNbO3 XBAR With Dielectric Bragg Reflectors
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-04
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deleteZishuo Zhang; Rui Ding; Junye Lin; Mingyu Chen; Long Chen; Peng Zheng; Sulei Fu; Shurong Dong; Jikui Luo; Weipeng Xuan
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Improved Interface Quality in β-Ga2O3 MOSFETs With a Crystalline (AlGa)2O3Cap
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-04
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deleteXiaole Jia; Shuqi Huang; Yibo Wang; Bochang Li; Cizhe Fang; Haodong Hu; Zhengdong Luo; Yan Liu; Yue Hao; Genquan Han
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Over 2 GW/cm2 Low Leakage Vertical β-Ga2O3 Schottky Barrier Diode With Multizone JTE via Self-Aligned NiO/β-Ga2O3 Co-Etching
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-04
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deleteLequan Wang; Junpeng Wen; Weibing Hao; Jinyang Liu; Song He; Qiuyan Li; Xuanze Zhou; Guangwei Xu; Shu Yang; Shibing Long
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A Compact Dynamic On-State Resistance Model for GaN-HEMTs in Soft-Switching Operation
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-08-03
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deleteMathias C. J. Weiser; David Miller; Michael Bosch; Dominik Koch; Jeremy Nuzzo; Ingmar Kallfass
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