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IEEE Transactions on Electron Devices
IF
3.2
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685
Citations
36717
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Guest Editorial: T-ED Special Issue on Reliability of Advanced Nodes
IEEE Transactions on Electron Devices
IF
3.2
2026-08-10
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Francesco Maria Puglisi; Zakariae Chbili
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Is Dielectric (Breakdown) Research at a Crossroad? Its Impact on Technology Innovation
IEEE Transactions on Electron Devices
IF
3.2
2026-07-17
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Ernest Y. Wu; Stephan Menzel; Takashi Ando
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Understanding Field-Cycling-Dependent Evolution of Polarization Dynamics in Nonvolatile Anti-Ferroelectric Hf<sub>x</sub>Zr<sub>1–x</sub>O<sub>2</sub> Capacitors
IEEE Transactions on Electron Devices
IF
3.2
2026-07-10
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Ziyuan Chen; Lijian Chen; Junliang Zhou; Zeping Weng; Daolin Cai; Yi Zhao
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A 1.8-kV Normally-Off Al-Rich AlGaN Channel HEMTs Featuring a Recessed Gate and Superlattice Structure
IEEE Transactions on Electron Devices
IF
3.2
2026-07-09
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Jaejin Heo; Joocheol Jeong; Shyam Mohan; Hyogeun Cho; Okhyun Nam; Sakhone Pharkphoumy; Hyun-Seop Kim
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Enhanced High-Temperature Performance of In-Situ SiN GaN MIS-HEMTs With an AlN Back Barrier Up to 500 °C
IEEE Transactions on Electron Devices
IF
3.2
2026-07-09
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PRE
AI
Xuejing Sun; Xiufeng Song; Longyang Yu; Linhuan Gao; Junchun Bai; Bin Cheng; Juan Gui; Ga Zhang; Shengrui Xu; Yinhe Wu; Shuzhen You; Yachao Zhang; Ming Xiao; Shenglei Zhao; Yue Hao; Jincheng Zhang
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Impact of Maximum Process Temperature on Negative Bias Temperature Instability in p-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors
IEEE Transactions on Electron Devices
IF
3.2
2026-07-09
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Chia-Chuan Wu; William Cheng-Yu Ma; Ting-Chang Chang; Hong-Yi Tu; Ya-Ting Chien; Han-Yu Chang; Bo-Shen Huang; Su-Wen Yang
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Nonfilamentary Switching With Trap-Controlled Capacitive Charge Modulation in GaO<sub>x</sub>/HfO<sub>x</sub> Heterostructures on Flexible Substrate
IEEE Transactions on Electron Devices
IF
3.2
2026-07-08
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S. Azhar; I. Biswas; N. Paul; H. Finch; A. Mondal; M. K. Mondal; V. Dhanak; S. Chattopadhayay; R. Mahapatra
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A <italic>C</italic>-Band Relativistic Magnetron With a Slotted Circular Waveguide Extraction Structure
IEEE Transactions on Electron Devices
IF
3.2
2026-07-08
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Zijun Huang; Tingxu Chen; Yanlin Deng; Fan Zhang; Bo Zhao; Biao Hu; Haiyang Wang; Hao Li; Tianming Li
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Experiments of a Novel Junction Field-Effect Transistor With Dual-Controlled 3-D Gates
IEEE Transactions on Electron Devices
IF
3.2
2026-07-08
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Nailong He; Teng Liu; Yuxiao Kun; Jiawei Wang; Xiaofeng Lai; Hao Wang; Ting Wang; Ziao Zhang; Liang Song; Sen Zhang; Jie Ma; Long Zhang; Shiyang Liu; Weifeng Sun
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Improving the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cell by Modification of Photoanode Using NiO/TiO<sub>2</sub> Nanofibers
IEEE Transactions on Electron Devices
IF
3.2
2026-07-07
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Yu-Hsun Nien; Chia-Wei Wang; Jung-Chuan Chou; Chih-Hsien Lai; Po-Hui Yang; Po-Yu Kuo; Jhih-Wei Zeng; Yu-Wei Chen; Xin-Han Chen; Yu-Han Huang; Wen-Hao Chen; Mao-Yang Lee
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High Threshold Voltage E-Mode MIS-HEMTs on 6-in GaN-on-Si: Fully Recessed Gate With N<sub>2</sub>/O<sub>2</sub> Plasma Treatment
IEEE Transactions on Electron Devices
IF
3.2
2026-07-07
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Qingyuan Zuo; Xin Xia; Huolin Huang; Yun Lei; Jianxun Dai; Wei Li; Yanliang Qiu; Xinyang Wang; Kainan Wang; Kaiming Ma; Yung C. Liang
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Boosting ALD In<sub>2</sub>O<sub>3</sub> Transistor Performance Using Hybrid H<sub>2</sub>O and O<sub>3</sub> Co-Reactant
IEEE Transactions on Electron Devices
IF
3.2
2026-07-03
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Ziheng Wang; Kai Jiang; Chen Wang; Hequn Zhou; Liankai Zheng; Zhiyu Lin; Mengwei Si
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Investigation of Gate Field-Plate Effects on f<sub>max</sub> Improvement in GaN HEMTs for RF Applications
IEEE Transactions on Electron Devices
IF
3.2
2026-07-03
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Xuejing Yang; Wan-Soo Park; Dae-Hyun Kim; Kyounghoon Yang
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Temperature Compensation Asymmetry at Thermal Extremes in 3-D NAND Flash: Physical Mechanisms and State Dependence
IEEE Transactions on Electron Devices
IF
3.2
2026-07-02
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Yicheng Ke; Minghui Dong; Linlin Cai; Wangyong Chen
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Investigation on the Degradation and Failure Mode of Trench SiC MOSFETs Under Repetitive UIS Stresses
IEEE Transactions on Electron Devices
IF
3.2
2026-07-01
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Shengrong Zhong; Hongyu Zhang; Shifeng Yan; Ziwei Kong; Guangwei Xu; Shibing Long
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A Liquid Density Sensor Based on AlN Piezoelectric Micromachined Ultrasonic Transducer Insensitive to Liquid Viscosity
IEEE Transactions on Electron Devices
IF
3.2
2026-07-01
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Xuecong Fu; Long Zhang; Liang Lou; Hao Ren
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Design and Experimental Study of a High-Power <italic>Ka</italic>-Band Folded-Waveguide Traveling-Wave Tube
IEEE Transactions on Electron Devices
IF
3.2
2026-07-01
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AI
Jiasong Wang; Fujun Xiao; Mengjie Yuan; Zhaoyun Duan; Zhigang Lu; Yubin Gong; Huarong Gong
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Fabrication and Characterizations of High-Aspect-Ratio TSVs With Low Parasitic Parameters for High-Density 3-D Integration
IEEE Transactions on Electron Devices
IF
3.2
2026-07-01
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Xuyan Chen; Zhiming Chen; Ziyue Zhang; Jiaxuan Zhang; Yuwen Su; Yingtao Ding
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A New Ethanol Gas Sensor Produced by an Indium Zinc Oxide Layer and Bimetallic Nanoparticles
IEEE Transactions on Electron Devices
IF
3.2
2026-07-01
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Yu-Xiang Wang; Jui-Hung Lin; I-Ping Liu; Jung-Chuan Wang; Kun-Wei Lin; Wen-Chau Liu
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Electronic Frequency Tuning in the 330-GHz CW Clinotron Oscillator With Modified Cavity
IEEE Transactions on Electron Devices
IF
3.2
2026-06-30
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O. Kuleshov; S. Steshenko; E. Khutoryan
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