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A Current-Based Write Method for Multibit IGZO 2T0C DRAM

delete2026-03-01
delete0
PRE
AI
N
Naide Mao
M
Menggan Liu
F
Fuxi Liao
K
K.-Y. Chen
X
Xuanming Zhang
Z
Zihan Li
C
Congyan Lu
J
Jiebin Niu
C
Cheng Lu
Y
Yu Liu
S
Shengjie Zhao
D
Di Geng
L
Lu, Nianduan
Y
Yang, Guanhua *
L
Ling Li
DOI：10.1109/TED.2026.3669474delete
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摘要

摘要

En 中文
我们提出了一种在IGZO 2T0C DRAM中的新型基于电流的写入方法，用于补偿阈值电压（V-TH）变化。在写入操作期间，通过公共位线（BL）将电流写入2T0C单元，生成与不同电流值对应的自校准存储节点（SN）电压（V-SN）。被编程为相同电流值的单元在读取晶体管上产生相同的过驱动电压（V-SN-V-TH），从而实现与V-TH变化无关的高度均匀的读取电流。通过此设计，在25个IGZO 2T0C单元中实现了4位存储。这项工作为多比特DRAM应用开辟了一条新途径。
Keyword:
Random access memory
Transistors
Threshold voltage
Programming
Logic gates
Fabrication
Timing
Scanning electron microscopy
Fluctuations
Temperature
array
IGZO
multibit
VTH compensation

期刊

IEEE Transactions on Electron Devices 封面图
IEEE Transactions on Electron Devices
IF:
3.2
论文数:
790
被引数:
3.7W

机构

C
chinese academy of sciences
学者数:
56.7W
论文数: 45.0W
被引数: 704
引用论文

引用论文

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