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IEEE Transactions on Electron Devices 封面图

IEEE Transactions on Electron Devices

IF3.2
论文数804
被引数36717
期刊论文 804
发表时间
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Impact of STI Depth and Anneal Temperature on IDDQ Failures in 40-V EDPMOS Technology for Power Management IC ApplicationsSTI深度和退火温度对用于电源管理IC应用的40-V EDPMOS技术中IDDQ故障的影响
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-10-29
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PREAI
deleteChing-Huei Tsai; Tian-Li Wu
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Contacts to 2-D Semiconductor MOSFETs: Interface Cleaning and Its Effect on Contact Resistance二维半导体MOSFET的接触：界面清洁及其对接触电阻的影响
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deleteSurajit Sutar; Gaohang He; Pieter-Jan Wyndaele; Jean-François de Marneffe; Kaustuv Banerjee; Clement Merckling; Stefan de Gendt; Cesar J. L. de la Rosa; Gouri S. Kar
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High-Performance P-Channel Transistors With Sputtered Te-Se/TeO2 Heterojunction高性能P沟道晶体管与磁控溅射Te-Se/TeO2异质结
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deleteYudong Zhang; Shaocong Lv; Tan Zhang; Xiangning Cai; Xianglong Li; Junming Zhang; Chaoran Dong; Zhiyuan Wang; Mingyu Zhuang; Chengyuan Wang; Baoqing Zhang; Dapeng Huang; Qian Xin; Yuxiang Li; Aimin Song; Jiawei Zhang
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A Data-Driven Compact Modeling Framework for Ferroelectric Memcapacitors Based on Systematic Characterization基于系统表征的铁电忆容器的数据驱动紧凑建模框架
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IF3.2
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deleteGuoyang Huang; Deepika Yadav; Mohamed Awadein; Themis Prodromakis
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Fabrication-Oriented Low-Voltage Dual-Width Folded Waveguide forW-Band Traveling-Wave Tubes面向制造的低电压双宽度折叠波导用于W波段行波管
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IF3.2
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deleteOAAI
deleteEleonora Traina; Vincenzo Sottile; Vincent Da Costa; Rosa Letizia; Patrizia Livreri; Alessandro Busacca; Claudio Paoloni
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Resistivity Scaling of Topological CoSi Wires to Sub-10 nm for Post-Cu Interconnects拓扑CoSi纳米线电阻率缩放至10 nm以下以用于后铜互连
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deleteGuy M. Cohen; Franco Stellari; Peter Kerns; Leonidas Ocola; John Bruley; Lynne Gignac; Michael Chido; Vesna Stanic; Christian Lavoie; Nathan Marchack; Joshua T. Smith; Vijay Narayanan; Ching-Tzu Chen
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A Slowdown-Aware Programming Scheme for Efficient Program Operation in Vertical NAND Flash Memory一种面向减速感知的高效垂直NAND闪存程序操作编程方案
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IF3.2
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deleteDongbeen Shin; Sung-Ho Park; Mingyun Oh; Yeongheon Yang; Jong-Ho Lee; Gyuweon Jung
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High-Temperature Charge Exchange Characteristic in Homoepitaxial 3C-SiC MOS Capacitor高温下同质外延3C-SiC MOS电容器的电荷交换特性
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deleteZheng Hu; Yidan Tang; Huaping Song; Xinhua Wang; Zesheng Zhang; Junwei Yang; Guobin Wang; Yun Bai; Songbo Guo; Kai Du; Xuan Li; Nannan You; Xiaoli Tian; Jilong Hao; Xinyu Liu
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Subnanosecond Characterization of Gate Dielectrics Using an On-Chip Pulse Generator使用片上脉冲发生器对栅介质进行亚纳秒级表征
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-10-27
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deleteMatthew Drallmeier; Elyse Rosenbaum
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Modeling of Interpixel Blooming Over the Complete Pixel Operating Cycle in CMOS Image SensorsCMOS图像传感器中整个像素工作周期内像素间溢出的建模
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delete2026-10-26
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deleteJinghua Ao; Jiangtao Xu; Quanmin Chen
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Switching Losses and Their Mitigation in Lateral β-Ga2O3 Power MOSFETs With High-Permittivity Dielectric for Field Management横向β-氧化镓功率MOSFET器件中的开关损耗及其在电场管理高介电常数介质下的抑制
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deleteWenpeng Zhou; Zuokai Wen; Zhiqiang Li; Biao Zhao; Man Hoi Wong
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Revisiting Temperature Dependence of dI C/dt and dV CE/dt for Field-Stop IGBTs Under Capacitor-Assisted Soft-Switching Turn-Off重新审视电容器辅助软开关关断下场-stop IGBT的dI_C/dt和dV_CE/dt的温度依赖性
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deleteZhaoyuan Qi; Xuebao Li; Danyang Li; Pengbo Miao; Yumeng Cai; Yushan Zhao; Xiao Ding; Lingling Xu
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A Low-Power QB-Sharing Emission Driver for a-IGZO TFT AMOLED Displays低功耗QB共享发射驱动器用于a-IGZO TFT AMOLED显示器
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-10-23
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deleteWon-Been Jeong; Sang-Hoon Kim; Seung-Won Kwak; Seung-Woo Lee
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Experimental Research on Compact Impedance-Tunable Relativistic Magnetron紧凑型阻抗可调 relativistic magnetron 的实验研究
deleteIEEE Transactions on Electron Devices
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delete2026-10-23
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deleteBo Zhao; Yanlin Deng; Renjie Cheng; Xingkai Sun; Sidi Liu; Yiyun Wang; Yongping Lei; Chaoxiong He; Haitao Wang; Hao Li; Biao Hu; Haiyang Wang; Tianming Li; Tingxu Chen
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Metallic Nanograting-Driven Ultrahigh-Performance Ga2O3 Solar-Blind Photodetector金属纳米光栅驱动的超高性能Ga₂O₃日盲光电探测器
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-10-22
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deleteZhehui Tang; Dan Yang; Qiqing Li; Chenxi Wang; Yue Dai; Haizhong Zhang; Xiaoqiang Lu; Minmin Zhu
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Study of Nonlinear Scanning Behaviors of PZT-Based Piezoelectric Micromirrors Under DC-BiasingPZT基压电微镜在直流偏压下的非线性扫描行为研究
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deleteKe Cao; Qincheng Zheng; Chenyu Bai; Yulang Cheng; Hao Chen; Qian Chen; Huikai Xie
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A Structural-Parameter 3-D Model of the Thermoelectric RF Power Sensor热电器件RF功率传感器的结构参数3-D模型
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IF3.2
delete2026-10-20
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deleteQingying Hu; Jiarui Hao; Xiaoping Liao
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A Wide-Dynamic-Range 4-Tap iToF Imager Using Linearization of Linear-Logarithmic Response in a Storage Diode Structure宽动态范围4级iToF成像器，采用存储二极管结构中的线性-对数响应线性化
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IF3.2
delete2026-10-20
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deleteGabriel Alcade; Tomohiro Okuyama; Hyeun Woo Kwen; Kamel Mars; De Xing Lioe; Keita Yasutomi; Keiichiro Kagawa; Shoji Kawahito
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Threshold Voltage Control in InOx Thin-Film Transistors Determined by Different Work Function of Gate Metals不同功函数栅金属决定的InOx薄膜晶体管的阈值电压控制
deleteIEEE Transactions on Electron Devices
IF3.2
delete2026-10-20
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deleteChang Niu; Linjia Long; Jian-Yu Lin; Peide D. Ye
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3-D Ferroelectric NAND With Common-Plate for Uniform Read Current and Efficient Layer-Parallel Computing-in-Memory3-D铁电NAND结构采用共板设计，实现均匀读电流和高效的层间并行计算存储器
deleteIEEE Transactions on Electron Devices
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delete2026-10-20
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deleteDongxue Zhao; Zongwei Wang; Runteng Zhu; Haoran Wang; Ling Liang; Kechao Tang; Zhiliang Xia; Zongliang Huo; Yimao Cai
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