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A microprocessor based on a two-dimensional semiconductor
DOI:10.1038/ncomms14948.png)
摘要
En 中文
The advent of microcomputers in the 1970s has dramatically changed our society. Since then, microprocessors have been made almost exclusively from silicon, but the ever-increasing demand for higher integration density and speed, lower power consumption and better integrability with everyday goods has prompted the search for alternatives. Germanium and III-V compound semiconductors are being considered promising candidates for future high-performance processor generations and chips based on thin-film plastic technology or carbon nanotubes could allow for embedding electronic intelligence into arbitrary objects for the Internet-of-Things. Here, we present a 1-bit implementation of a microprocessor using a two-dimensional semiconductor-molybdenum disulfide. The device can execute user-defined programs stored in an external memory, perform logical operations and communicate with its periphery. Our 1-bit design is readily scalable to multi-bit data. The device consists of 115 transistors and constitutes the most complex circuitry so far made from a two-dimensional material.
Keyword:
FIELD-EFFECT TRANSISTORS
THIN-FILM TRANSISTORS
HIGH-MOBILITY
LARGE-AREA
INTEGRATED-CIRCUITS
MOS2 TRANSISTORS
GROWTH
LAYERS
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期刊
IF:
15.7
论文数:
9.3W
被引数:
91.2W
机构
引用论文
Silicene field-effect transistors operating at room temperature室温下工作的硅烯场效应晶体管
NATURE NANOTECHNOLOGY
IF34.9
Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
NATURE COMMUNICATIONS
IF15.7
High Performance Multilayer MoS2 Transistors with Scandium Contacts具有钪触点的高性能多层MoS2晶体管
NANO LETTERS
IF9.1

