未登录The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials基于二维材料的六角形氮化硼作为缩放CMOS器件绝缘体的性能极限
Knobloch, Theresia; Illarionov, Yury Yu.; Ducry, Fabian; Schleich, Christian; Wachter, Stefan; Watanabe, Kenji; Taniguchi, Takashi; Mueller, Thomas; Waltl, Michael; Lanza, Mario; Vexler, Mikhail I.; Luisier, Mathieu; Grasser, Tibor .png)
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收藏Analogue two-dimensional semiconductor electronicsPolyushkin, Dmitry K.; Wachter, Stefan; Mennel, Lukas; Paur, Matthias; Paliy, Maksym; Iannaccone, Giuseppe; Fiori, Gianluca; Neumaier, Daniel; Canto, Barbara; Mueller, Thomas 分享 收藏 Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors用于二维场效应晶体管的超薄氟化钙绝缘体Illarionov, Yury Yu; Banshchikov, Alexander G.; Polyushkin, Dmitry K.; Wachter, Stefan; Knobloch, Theresia; Thesberg, Mischa; Mennel, Lukas; Paur, Matthias; Stoeger-Pollach, Michael; Steiger-Thirsfeld, Andreas; Vexler, Mikhail, I; Walt, Michael; Sokolov, Nikolai S.; Mueller, Thomas; Grasser, Tibor 分享 收藏 分享 收藏 分享 收藏 分享 收藏 
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