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A Split-Path Sensing Circuit for Spin Torque Transfer MRAM
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DOI：10.1109/TCSII.2013.2296136.png)
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As process technology scales down, sensing becomes difficult during read operations because the supply voltage, i.e., VDD, decreases and the process variation increases. Thus, a high enough sensing yield cannot be obtained with a conventional sensing circuit in deep submicron process technology. In this brief, a split-path sensing circuit is proposed to achieve a large enough sensing margin by using a variable reference voltage. The proposed sensing circuit is verified using Monte Carlo HSPICE simulation with industry-compatible low-leakage 45-nm model parameters. The proposed circuit has a sensing yield of 99% for 1-Mb memory with a sensing time of 1 ns and a sensing yield of 99% for 32-Mb memory with a sensing time of 3 ns.
Keyword:
Sensing circuit
sensing margin
spin torque transfer magnetic random access memory (STT-MRAM)
split path
yield
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