返回
A systematic study of DRIE process for high aspect ratio microstructuring
DOI:10.1016/j.vacuum.2010.01.052.png)
摘要
En 中文
Various MEMS devices like Accelerometers, Resonators, RF- Filters, Micropumps, Microvalves, Micro-dispensers and Microthrusters are produced by removing the bulk of the substrate materials. Fabrications of such Microsystems requires the ability to engineer precise three-dimensional structures in the silicon substrate. Fabrication of MEMS faces multiple technological challenges before it can become a commercially viable technology. One key fabrication process required is the deep silicon etching for forming high aspect ratio structures. There is an increasing interest in the use of dry plasma etching for this application because of its anisotropic etching behavior, high etch speed, good uniformity and profile control, high aspect ratio capabilities without having any undesired secondary effects i.e. RIE lags, Loading, microloading, loosing of anisotropic nature of etching as aspect ratio increases, micro-grass and even etch stalling. Developing a DRIE micro-machining process requires a thorough understanding of all plasma parameters, which can affect a silicon etching process and their use to suppress the secondary effects. In this paper our intention is to investigate the influence of etching gas flow, etching gas pressure, passivation gas pressure, ICP coil power, Platen power and etch and passivation time sequence on etch rate and side wall profile. Parameter ramping is a powerful technique used to achieve the requirements of high aspect ratio microstructures (HARMS) for MEMS applications by having high etch rate with good profile/CD control. The results presented here can be used to rationally vary processing parameters in order to meet the microstructural requirements for a particular application. (C) 2010 Elsevier Ltd. All rights reserved.
Keyword:
Silicon etching
MEMS
DRIE
HARMS
micro-machining
Parameter ramping
AI总结
对已上传原文的论文进行重点信息的提取,主要内容包括:简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
3.9
论文数:
1.4W
被引数:
2.5W
机构
引用论文
Plasma etch models based on different plasma chemistry for micro-electro-mechanical-systems application
VACUUM
IF3.9
Tetraspanin CD151 as an emerging potential poor prognostic factor across solid tumors: a systematic review and meta-analysis
Oncotarget
IF0
Development of dual-etch via tapering process for through-silicon interconnection用于穿硅互连的双蚀刻通孔锥形工艺的开发
没有更多内容

