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P.J. George

semi-conductor laboratory (scl)

12H指数
54论文数
411被引数
收录论文 10
发表时间
A systematic study of DRIE process for high aspect ratio microstructuring高纵横比微结构的DRIE工艺的系统研究
errVACUUM
IF3.9
err2010-04-01
err29
PREAI
errHooda, Manish Kumar; Wadhwa, Manoj; Verma, Sanjay; Nayak, M. M.; George, P. J.; Paul, A. K.
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Zinc oxide thin film-based MEMS acoustic sensor with tunnel for pressure compensation
err2008-02-01
err32
PREAI
errArora, Aarti; Arora, Anil; Dwivedi, V. K.; George, P. J.; Sreenivas, K.; Gupta, Vinay
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Impact of dose and energy of argon (40Ar+) and fluorine (19F+) ion implantation on uniformity of silicon oxidation
errVACUUM
IF3.9
err2006-10-01
err1
PREAI
errKumar, Raj; Yadav, M. S.; Kishore, Kamal; Sambhawam, Kumar; Goyal, Sachin; Singh, D. N.; George, P. J.
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Co-sputtering phenomenon in plasma immersion ion implantation of samples for semiconductor applications
err2004-08-01
err1
PREAI
errRajkumar; Kumar, M; Mukherjee, S; Verma, S; Chari, KS; Singh, DN; George, PJ
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Structural and electrical properties of annealed In-Bi2S3 thin films
err1998-07-01
err2
PREAI
errParra, RS; George, PJ; Jimenez-Gonzalez, AE; Banos, L; Nair, PK
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