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Active pixel image sensor array based on large-scale ReS2 semiconducting film
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DOI：10.1016/j.mssp.2024.108474.png)
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In recent times, there have been remarkable strides in enhancing the growth techniques for two-dimensional (2D) transition metal dichalcogenides (TMDCs), particularly regarding their prospective applications in the domains of electronics and photonics. These advancements have ushered in fresh avenues for the incorporation of TMDCs into a wide array of devices. Nevertheless, an intriguing and relatively underexplored application domain pertains to the utilization of TMDCs in active pixel image sensors. In this context, we present our findings on pixel image sensor array that incorporates a thin ReS 2 film produced using a chemical vapor deposition (CVD) process and 2.5 nm thick Ta 2 O 3 tunneling layer. Every pixel within the image sensor comprises ReS 2 switching transistors and phototransistors. We measured the photoresponsivity (R ph ) of the ReS 2 phototransistors within a 6 x 6 pixel image sensor array. This measurement provided crucial insights into the sensor 's capacity to convert incident light into electrical signals, a fundamental aspect of image sensing. At zero gate voltage, for green laser, the photoresponsivity was approximately 0.2 A W - 1 . A, with P light and V ds held at 236 mW cm -2 and 2 V, respectively. However, with an increase in gate voltage to approximately 15 V, the photoresponsivity soared to an impressive 1.5 A W - 1 . A. Our investigation delved successfully into the image-sensing attributes of the fewlayer ReS 2 pixel image sensor array. These findings strongly suggest that the integration of ReS 2 into an active pixel array holds substantial promise for a diverse range of imaging applications. Future research in this direction may pave the way for advanced image sensors with enhanced performance and potential uses across various electronic and photonic devices.
Keyword:
2D
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IF:
4.6
论文数:
1.0W
被引数:
2.2W
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