A. Venkatesan - Publications, H-index & Citations

A. Venkatesan

birla institute of technology & science pilani (bits pilani)

8H指数

30论文数

200被引数

收录论文 8

发表时间

Active pixel image sensor array based on large-scale ReS2 semiconducting film

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-01

PREAI

Choi, Yongsu; Venkatesan, A.; Devnath, Anupom; Kim, Daewon; Lee, Seunghyun

Air-stable, all-dry transferred ReS2/GaSe heterostructure-based NO2 gas sensor

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

IF14.3

2024-01-01

PREAI

Venkatesan, A.; Ryu, Hyeyoon; Devnath, Anupom; Yoo, Hyungyu; Lee, Seunghyun

Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering 通过接触工程形成的WSe2横向p-n同质结中的无掺杂高性能光伏效应

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-07-13

PREAI

Le Thi, Hai Yen; Ngo, Tien Dat; Phan, Nhat Anh Nguyen; Shin, Hoseong; Uddin, Inayat; Venkatesan, A.; Liang, Chi-Te; Aoki, Nobuyuki; Yoo, Won Jong; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho

Improved electrical properties of encapsulated MoTe2 with 1T' edge contacts via laser irradiation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-01-01

OAAI

Kim, Yewon; Venkatesan, A.; Kim, Jihoon; Kim, Hanul; Watanabe, Kenji; Taniguchi, Takashi; Whang, Dongmok; Kim, Gil -Ho

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures

ADVANCED SCIENCE

IF14.1

2021-03-15

OAAI

Kim, Jihoon; Venkatesan, A.; Kim, Hanul; Kim, Yewon; Whang, Dongmok; Kim, Gil-Ho

Few-layer PdSe2 -based field-effect transistor for photodetector applications 用于光电探测器应用的基于PdSe2的少层场效应晶体管

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2020-08-01

PREAI

Venkatesan, A.; Rathi, Servin; Kim, Yunseob; Kim, Hanul; Whang, Dongmok; Yun, Sun Jin; Kim, Gil-Ho

Highly ordered copper oxide (Cu2O) nanopillar arrays using template assisted electrodeposition technique and their temperature dependent electrical characteristics

CURRENT APPLIED PHYSICS

IF3.1

2017-05-01

PREAI

Venkatesan, A.; Kannan, E. S.

In situ reduced graphene oxide interlayer for improving electrode performance in ZnO nanorods

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-05-12

PREAI

Venkatesan, A.; Ramesha, C. K.; Kannan, E. S.

研究方向