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Colorimetric Vertically Stacked Sensor Array Enabled by Solution-Processed Oxide Semiconductors for Volatile Organic Compound Detection
DOI:10.1021/acsaelm.6c00003.png)
摘要
En 中文
通过紫外辅助退火工艺合成的金属有机前驱体β-二酮配体旋涂氧化物半导体,促进分解和后续缩聚并保持氢和氧相关施主物种的高密度。这些施主有效供应自由电子并填充导带底附近的浅陷阱态,从而提高载流子迁移率和开启电流。使用SiO2栅介质的底栅晶体管实现了89 cm²/V·s的峰值场效应迁移率、26.42 μA的开启电流(Ion)和108的Ion/Ioff比。此外,导带底附近的陷阱态高密度拓宽了光谱检测范围,从紫外到可见光,产生8,900 A/W的高响应度和1.26 × 10¹⁴ Jones的探测度。利用这种宽带光响应特性,我们进一步开发了一种垂直堆叠的传感器平台用于检测挥发性有机化合物(VOCs)。这些结果表明,紫外辅助溶液处理是一种实现高性能氧化物电子学和多功能传感器平台的有力策略。
Keyword:
Oxides
Sensors
Solution processing
Transistors
Volatile organic compounds
solution process
oxide semiconductor
low temperature process
gas detection
Förster resonance energy transfer
volatile organic compounds
期刊
IF:
4.7
论文数:
5.0K
被引数:
1.4W
机构
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