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Combination-Encoding Content-Addressable Memory With High Content Density
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DOI：10.1109/ACCESS.2019.2942150.png)
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摘要
En 中文
Recently, resistance switch-based content-addressable memory (RCAM) has been proposed as an alternative to the mainstream static random-access memory-based CAM because of its high integration potential and low static energy consumption. However, RCAM has a lower data density due to the use of a pair of resistance switches for a single bit of contents (0.5 bit/switch) than resistive random access memory (1 bit/switch). In this paper, we propose a new type of RCAM referred to as combination-encoding CAM (CECAM). In the N-CECAM, a single unit consists of N high and N low resistance state switches whose combination collectively represents binary contents, yielding a data density of approximately 0.85 bit/switch when N = 10, for instance. The key to the CECAM is the encoding of an n-bit search key as a 2N-digit key and its decoding. To this end, we propose a simple algorithm for encoding and decoding and its implementation in digital circuitry.
Keyword:
Resistance
Encoding
Table lookup
Random access memory
Nonvolatile memory
Switches
Delays
Content-addressable memory
combination-encoding content-addressable memory
resistance switch
crossbar array
content density
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IF:
3.6
论文数:
9.8W
被引数:
29.4W
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