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Corrections to “Semi-Classical Monte Carlo Simulation of Quantum Confinement Effects in Si Nanosheet and Fin FETs in Industry Standard Orientation”
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DOI：10.1109/LED.2026.3682574.png)
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Abstract
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Presents corrections to the paper, (“Semi-Classical Monte Carlo Simulation of Quantum Confinement Effects in Si Nanosheet and Fin FETs in Industry Standard Orientation”).
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