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IEEE Electron Device Letters cover

IEEE Electron Device Letters

IF4.5
Papers716
Citations23123
Journal Papers 664
Publication Date
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High-Linearity and Submicrometer-Resolution GaN Position Sensitive Detector for Visible-Blind Ultraviolet Detection
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-23
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PREAI
deleteYifu Wang; Haifan You; Haiping Wang; Wenbin Yao; Yancheng Chen; Yongzhe Zhang; Jiandong Ye; Hai Lu; Dunjun Chen
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Write disturb model for 3D XPointTM array
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-22
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PREAI
deleteLuca Laurin; Mattia Boniardi; Innocenzo Tortorelli; Andrea Ghetti; Enrico Varesi; Hongqi Li; Christina Papagianni; Bob Gleixner; Hongmei Wang; Anna Maria Conti; Augusto Benvenuti; Paolo Fantini; Fabio Pellizzer
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Monolithic GaN Opto-Thermal Logic Array with On-Chip Optical and Thermal Inputs
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-22
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deleteHongying Yang; Kwai Hei Li
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Effectively Enhancing the Efficiency of Near-Infrared Organic Upconversion Devices by Introducing Intermediate Connecting Layer
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-21
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deleteWenli Lv; Heng Duan; Zihao Chen; Zhenchao Zhang; Sunan Xu; Lei Sun; Yingquan Peng
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Impact of Geometrical Modification at the Electrode/Channel Interface on a-IGZO Transistors
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-21
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PREAI
deleteDong-Seon Kim; Joo Hee Jeong; Seonwoong Bang; Gwang-Bok Kim; Seong Hun Yoon; Minsun Kim; Sunghyun Choi; Kwangmin Park; Jae Kyeong Jeong
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Thick 4H-SiC based Schottky-Type Electron Detector for Fast Microscopy and Extended Sensitivity to sub-keV
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-18
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deleteRenjie Xu; Jie Jin; Lin Zhang; Dong Zhou; Feng Zhou; Fangfang Ren; Dunjun Chen; Rong Zhang; Youdou Zheng; Weizong Xu; Hai Lu
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Dual-Gated p-Type Tellurium Transistors with High Drive Current, Large ON/OFF Ratio, and Improved Bias-Temperature Stability
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-17
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deleteJiazheng Chen; Arijit Sarkar; Yu-Lin Tsai; Dylan Matthews; Md Sazzadur Rahman; Sung-Tsun Wang; Shih-Chieh Chen; Der-Hsien Lien; Tania Roy
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1.6 GW/cm2 Baliga’s Figure-of-Merit Au-Free p-GaN Gate HEMTs on 6-inch Si Enabled by Regrown Ohmic Contacts
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-14
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PREAI
deleteZhiqiang Xue; Bin Hou; Mao Jia; Qian Xiao; Bowen Yang; Ling Yang; Mei Wu; Meng Zhang; Hao Lu; Kaiwen Chen; Hong Wang; Xiaohua Ma; Yue Hao
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In Situ On-Chip WO3 Nanoflower Arrays via Oxide-Phase Demixing for High-Performance Hydrogen Sensing
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-11
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PREAI
deleteJiyong Zhou; Tianliang Meng; Mingquan Zhang; Yier Xia; Xiaoting Tan; Hui Li; Haojiang Wen; Zeru Shen; Chi Zhang; Wei Hu; Xiaohong Wang; Lei Shan; Sixing Xu
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Improved AC PBTI in Si FinFETs with HfO2/ZrO2/HfO2 Nanolaminate Gate Stack
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-10
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PREAI
deleteHyun Jae Lee; Eknath Sarkar; Junsu Yu; Dyutimoy Chakraborty; Jin-Hao Jhang; Szuya Sandy Liao; Asif Khan; Shimeng Yu; Suman Datta
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High-performance TS3-mode SMR with Spurious Suppression and Near-zero TCF
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-07
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PREAI
deletePing Xiao; Yu Guo; Sulei Fu; Liwen Han; Zhenyi Yu; Shuai Zhang; Shouren Xie; Boyuan Xiao; Weibiao Wang; Feng Pan
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Achieving Large Memory Window and Area-Efficient FeFETs via Vertically Stacked Ferroelectric Gates
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-07
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PREAI
deleteQuanyi Tu; Jinchen Wei; Renhao Xue; Junchi Cheng; Ruizhan Yan; Yushi Sun; Mansun Chan; Xiwen Liu
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High-Performance P-Channel FDSOI MOSFETs via Modified Silicide-as-Diffusion-Source-Induced Dopant Segregation (M-SADS)
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-02
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PREAI
deleteBinbin Xu; Jing Xu; Keyou Tong; Wenjun Zhang; Jianfeng Gao; Xiaolei Wang; Tianchun Ye; Jun Luo
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Mitigation of Band-tails in Bulk-Si/high-κ NMOSFETs for Steep-slope Cryogenic Operation via an Ultrasmooth SiO2 Interlayer
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-02
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PREAI
deleteYu-Chen Chang; Yu-Tzu Liao; Max Renner; Mykhaylo Motylenko; David Rafaja; Christoph Jungemann; Qing-Tai Zhao; Joachim Knoch
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Normally-Off β-Ga2O3 Trench-Gate Current-Aperture Vertical Electron Transistors with High-Voltage Drain-Stress Stability
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-02
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PREAI
deleteJiahao Yao; Hehe Gong; Gaofu Guo; Jiazhao Jia; Anjing Luo; Zineng Yang; Rongming Yin; Fang-Fang Ren; Shulin Gu; Xiaodong Zhang; Yuhao Zhang; Jiandong Ye
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Revealing and Enhancing Channel-Coupled Polarization Reversal in Oxide-Semiconductor FeFETs through Post-Channel Ferroelectric Crystallization Annealing
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-02
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PREAI
deleteChengji Jin; Hao Tang; Minglei Ma; Qihang Sun; Xiaokang Wang; Haoqin Yang; Miaomiao Zhang; Bochang Li; Yong Wang; Yian Ding; Xiaoxi Li; Yan Liu; Haoji Qian; Jiajia Chen; Genquan Han
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β-Ga2O3 Vertical Schottky Barrier Diode with Thermally Cured Beveled Photoresist Field Plate
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-01
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PREAI
deleteYongjie He; Wenzheng Cheng; Jining Yang; Jingxuan Wei; Wenjun Liu; Hao Zhu
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Frequency-comb generation in a relativistic gyrotron with simultaneous excitation of neighboring axial modes
deleteIEEE Electron Device Letters
IF4.5
delete2026-09-01
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PREAI
deleteE.V. Ilyakov; I.S. Kulagin; A.N. Leontyev; A.M. Malkin; K.V. Mineev; R.M. Rozental; A.S. Shevchenko
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Changes to the Editorial Board
deleteIEEE Electron Device Letters
IF4.5
delete2026-08-28
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PREAI
deleteKelin J. Kuhn
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A Stacked Top Select Gate Architecture for High-Density 3D NAND Flash
deleteIEEE Electron Device Letters
IF4.5
delete2026-08-28
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PREAI
deleteMing Zeng; Jianquan Jia; Kun Zhang; Hengbo Xiao; Changtian Cao; Huajun Sun; Zongliang Huo
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