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Journal Details
IEEE Electron Device Letters
IF
4.5
Papers
735
Citations
23286
Related Insights
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Journal Papers
735
Related Insights
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Journal Papers
735
Publication Date
Publication Date
IF
Citations
Thin-Film Transistor-Based Digital Sweep Driver Circuit for Progressive Emission in Micro Light-Emitting Diode Displays
IEEE Electron Device Letters
IF
4.5
2026-10-23
0
PRE
AI
Joon-Sung Choi; JingHui Jin; Kook Chul Moon; Yong-Sang Kim
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Gate-All-Around IGZO FET with Tubular Channel Achieve High Current and Stability
IEEE Electron Device Letters
IF
4.5
2026-10-23
0
PRE
AI
Shipeng Wang; Weiwei Li; Kaiping Zhang; Jiebin Niu; Shengjie Zhao; Yu Liu; Huan Liu; Wenfeng Jiang; Congyan Lu; Guanya Wang; Cheng Lu; Chuanke Chen; Di Geng; Ling Li
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CMOS-Compatible Metal-Insulator-Metal Electron Source Enabled by Grass-like Alumina
IEEE Electron Device Letters
IF
4.5
2026-10-23
0
PRE
AI
Xiaojing Huyan; Haolin Lei; Guanyang Zhang; Yongxun Liu; Shinan Wang; Qiang Liu; Wenjie Yu
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11000 PPI CMOS-Driven Quantum Dot Microdisplays Enabled by Interfacial Work-Function Engineering
IEEE Electron Device Letters
IF
4.5
2026-10-22
0
PRE
AI
Fumin Lu; Xuhui Wan; Yuqi Wang; Xiangtian Xiao; Depeng Li; Min Liao; Zijie Fu; Yixing Chen; Xiao Wei Sun; Dan Wu; Kai Wang
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High-Speed Dual-Illumination Quasi-Vertical β-Ga
2
O
3
Schottky Solar-Blind UV Photodetector
IEEE Electron Device Letters
IF
4.5
2026-10-19
0
PRE
AI
Yunlong Xie; Chen Cui; Huanyu Zhang; Zhucheng Li; Yu Hu; Tiwei Chen; Yuhua Sun; Li Zhang; Chunhong Zeng; Xiaodong Zhang; Zhongming Zeng; Baoshun Zhang
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Recessed-Gate N-Polar GaN HEMT with Dual Transconductance Peaks
IEEE Electron Device Letters
IF
4.5
2026-10-19
0
PRE
AI
Yu Qi; Xiaoning Zhan; Xinkun Zhang; Qian Li; Jiaanli Wang; Cheng Li; Yu Zhou; Jianxun Liu; Qian Sun; Hui Yang
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Impact of Scaling on the Temperature Dependence of GaN HEMTs
IEEE Electron Device Letters
IF
4.5
2026-10-19
0
PRE
AI
Biddut K. Sarker; Leonard A. Duncan; Shaikh S. Ahmed; Stefan Nikodemski; Erdem Arkun; Dan Denninghoff; Kelson D. Chabak; Andrew J. Green; Ahmad E. Islam
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GeTe Phase-change Switch with a Graphene Buffer Layer Featuring Low Thermal Stress and High RF Performance
IEEE Electron Device Letters
IF
4.5
2026-10-19
0
PRE
AI
Xin Sun; Libin Gao; Keyan Chen; Zegao Wang; Tianpeng Liang; Hongwei Chen; Jihua Zhang
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Ten-Layer Stacked FeRAM by Sequential 3D Crosspoint-Compatible Integration
IEEE Electron Device Letters
IF
4.5
2026-10-19
0
PRE
AI
Renhao Xue; Ruizhan Yan; Wenjuan Zhou; Shengjie Cao; Qianqian Huang; Xiwen Liu; Mansun Chan
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Highly stretchable synaptic transistors based on microcracked Ag electrode for strain-adaptive neuromorphic electronics
IEEE Electron Device Letters
IF
4.5
2026-10-19
0
PRE
AI
Jin-Shuo Wang; Da Yin; Ting-Ting Pan; Xiang-Wei Li; Hao-Yang Zhang; Shi-Xin Jia; Yan-Gang Bi; Yu Liu; Jing Feng
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3.0 W/mm Output Power Density at W-Band from Enhancement-Mode AlGaN/GaN HEMT with Free-Standing T-Gate
IEEE Electron Device Letters
IF
4.5
2026-10-15
0
PRE
AI
Zhentong Huang; Pengfei Wang; Minhan Mi; Dongxu Xiao; Xiang Du; Feiyang Chen; Xiangxin Cao; Jingyun Yao; Yifan Liu; Xiaohua Ma; Yue Hao
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Resistive-embedded Field Effect Transistor - ReFET: A Highly Scalable 1T-NVM Architecture Bypassing the Voltage-Divider Bottleneck in Resistive Switching
IEEE Electron Device Letters
IF
4.5
2026-10-15
0
OA
AI
Yi Xiang Huang; Cheng Yi Yang; Zhi Yuan Chen; E Ray Hsieh
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Microscale Perovskite-based Memristors with Ultra-low Power Consumption and Good Endurance
IEEE Electron Device Letters
IF
4.5
2026-10-13
0
PRE
AI
Conghui Tan; Qiming Liu; Huayi Tang; Bingbing Li; Jing Li; Jiao Xu; Yiming Yang
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Stimulus-Dependent Arousal-State Regulation Achieved by Oxide Heterojunction Memristor
IEEE Electron Device Letters
IF
4.5
2026-10-13
0
PRE
AI
Wenhua Wang; Zhihan Zhang; Dong Wang; Jian Liang; Zhengxiao Wu; Rui Meng; Lindong Wu; Xiaodong Huang
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Channel-Proximal AlN/GaN Digital Alloying Enhances Al-rich AlGaN Heterojunction Phototransistors
IEEE Electron Device Letters
IF
4.5
2026-10-13
0
PRE
AI
Zhanyu Gao; Zhuoya Peng; Zesheng Lv; Hao Jiang
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Bias- and Time-Dependent Gate Injection Operation in an n-type SONOS TFT with an n
+
Poly-Si Gate
IEEE Electron Device Letters
IF
4.5
2026-10-09
0
PRE
AI
Joonhyung Cho; Joon Hwang; Suyoung Park; Min-Kyu Park; Jong-Ho Lee
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Reconfigurable Hf
0.5
Zr
0.5
O
2
-based Memristor for CSNN Applications
IEEE Electron Device Letters
IF
4.5
2026-10-09
0
PRE
AI
Shaotian Zhang; Wenhui Wang; Chen Lu; Tianyu Wang; Hao Zhu; Qingqing Sun; David Wei Zhang; Jialin Meng; Lin Chen
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Tailoring Morphotropic Phase Boundary Characteristics in Ferroelectric Hf
0.66
Zr
0.33
O
2
via Ozone Pulse Time Engineering of the Seed Layer
IEEE Electron Device Letters
IF
4.5
2026-10-08
0
PRE
AI
Hyundeok Yoo; Manh-Cuong Nguyen; An Hoang-Thuy Nguyen; Seunghyun Jung; Gyeongyeol Lee; Sookyung Kim; Soomin Lee; Sungju Jung; Rino Choi
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6 A/1.6 kV or 1.4 GW/cm
2
β-Ga
2
O
3
MOS-JFETs with Sandwiched-like RESURF Structure
IEEE Electron Device Letters
IF
4.5
2026-10-08
0
PRE
AI
Hongqing Yue; Hong Zhou; Yitao Feng; Hao Fang; Xiaorong Zhang; Yanbo Chen; Guotao Tian; Chenlu Wang; Min Zhou; Qian Feng; Chunfu Zhang; Rujun Sun; Yue Hao; Jincheng Zhang
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Partial Bottom-Gate Architecture for Enhanced NBIS Stability in Dual-Gate IGZO TFTs
IEEE Electron Device Letters
IF
4.5
2026-10-07
0
PRE
AI
Hong-Yi Tu; Chia-Chuan Wu; Ting-Chang Chang; Han-Yu Chang; Ya-Ting Chien; Bo-Shen Huang; Po-Yu Yen; Yu-Hsiung Tsai; Tsung-Ming Tsai
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