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IEEE Electron Device Letters
IF
4.5
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614
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Corrections to “Suppressing Interface Traps Density of Top-Gate MoS<sub>2</sub> Transistor via H<sub>2</sub>O Presoak for HfO<sub>2</sub>”
IEEE Electron Device Letters
IF
4.5
2026-07-29
0
PRE
AI
Kaiyue He; Zhanqi Li; Yijing Yang; Yifu Sun; Lingyu Zhang; Ruhai Liu; Maguang Zhu
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Changes to the Editorial Board
IEEE Electron Device Letters
IF
4.5
2026-07-28
0
PRE
AI
Kelin J. Kuhn
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Strain-Induced Mobility Enhancement in Crystalline In<sub>2</sub>O<sub>3</sub> FETs
IEEE Electron Device Letters
IF
4.5
2026-06-29
0
PRE
AI
Huangbai Liu; Yan Le; Wei Shi; Xinming Li; Gan Liu; Dong Zhang; Rui Shao; Chen Sun; Xiao Gong
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Physics-Guided 1D-CNN Inverse Mapping From S-Parameters to THz SWS Geometry
IEEE Electron Device Letters
IF
4.5
2026-06-29
0
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AI
Juntao Xie; Yuan Zheng; Yuxin Wang; Jin Zhang; Zhanliang Wang; Shaomeng Wang; Yubin Gong
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High-Uniformity Wafer-Level Porous TiO<sub>2</sub>–WO<sub>3</sub> Heterojunction Sensor Chips for Highly-Sensitive Ethanol Detection
IEEE Electron Device Letters
IF
4.5
2026-06-25
0
PRE
AI
Tianliang Meng; Jiyong Zhou; Mingquan Zhang; Xiaoting Tan; Haojiang Wen; Hui Li; Jianyou Dai; Chi Zhang; Lei Shan; Sixing Xu
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Improved Energy Resolution in Amorphous Selenium X-Ray Detectors via Unipolar Charge Sensing
IEEE Electron Device Letters
IF
4.5
2026-06-25
0
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AI
Ahmet Camlica; Yagiz Mart; Peter M. Levine; Denny L. Lee; Karim S. Karim
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All-ALD Sequential Monolithic Integration of Selector-Free Five-Layer Ferroelectric Diodes for 3-D Cross-Point Memory
IEEE Electron Device Letters
IF
4.5
2026-06-18
0
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AI
Wenjuan Zhou; Ruizhan Yan; Renhao Xue; Mansun Chan; Xiwen Liu
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A Ruthenium-Coated Low-Adhesion Nanogap MEMS Switch With 2.5-V Actuation, 27-ns Switching, and Ω-Level Contact Resistance
IEEE Electron Device Letters
IF
4.5
2026-06-12
0
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AI
Tae-Soo Kim; Do-Hoon Lim; Sung-Ho Kim; So-Young Lee; Su-Min Jeon; Yeong-Min Cho; Yong-Bok Lee; Jun-Bo Yoon
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Experiment Demonstration of Hybrid-Orientation Sequential CFET Boosting Hole Mobility
IEEE Electron Device Letters
IF
4.5
2026-06-12
0
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AI
Kun Yang; Zhongrui Wang; Zhongshan Xie; Hang Zhang; Mingzhu Yan; Junjie Li; Yanyi Pan; Yingze Ren; Yupeng Lu; Jinbiao Liu; Meihe Zhang; Yadong Zhang; Lei Cao; Qingzhu Zhang; Junfeng Li; Huaxiang Yin; Xiaolei Wang; Jun Luo
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Nonlinear Asymmetric Parasitic Resistance Extraction of Vertical Pillar-Type FET Using Physics-Informed Artificial Neural Network
IEEE Electron Device Letters
IF
4.5
2026-06-11
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Jaewook Yoo; Hongseung Lee; Sojin Jung; Seongbin Lim; Soohyun Lim; Donghyeon Lee; Dongsun Shin; Junhui Park; Sieun Lee; Yang-Kyu Choi; Hagyoul Bae
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A High-Throughput True Random Number Generator Based on the Competitive Turn-On of OTS Devices
IEEE Electron Device Letters
IF
4.5
2026-06-08
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Dejiang Mu; Huan Wang; Nan Li; Keqin Li; Yujian Zhong; Pan Liu; Ming Xu; Xiangshui Miao; Xingsheng Wang
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Modeling of Polarization Dynamics in HfO<sub>2</sub>-Based Ferroelectrics by Reduced <italic>L-K</italic> Model
IEEE Electron Device Letters
IF
4.5
2026-06-08
0
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AI
Bing Chen; Haoran Yu; Wenhao Liu; Shuyu Zhang; Jiayi Zhao; Jifang Cao; Xuecheng Cui; Jiuren Zhou; Xiao Yu; Ran Cheng; Yan Liu; Genquan Han
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AlGaN-Based UV LEDs With High Wall-Plug Efficiency
IEEE Electron Device Letters
IF
4.5
2026-06-03
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Wenting Gong; Michael Wang; Alejandro Quevedo; Jonathan Bigelow; Yifan Yao; Michael Iza; Abdullah Almogbel; James S. Speck; Steven P. Denbaars; Shuji Nakamura
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Room Temperature Fluorination: A Cost-Effective V<sub>TH</sub> Engineering Solution for BEOL Oxide Semiconductor FETs Enabling Inverters With Record Gain of 2687 and High Noise Margin
IEEE Electron Device Letters
IF
4.5
2026-06-03
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AI
Xuanqi Chen; Gan Liu; Kaizhen Han; Yuye Kang; Yuxuan Wang; Rui Shao; Kai Ni; Bich-Yen Nguyen; Xiao Gong
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Vertical GaN Schottky Barrier Diodes With Polarized P-InGaN/P-GaN Heterojunction Termination Extension Structure
IEEE Electron Device Letters
IF
4.5
2026-06-01
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AI
Bin Zhao; Liyang Chai; Weizhe Wang; Ningyang Liu; Lei Li
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1800 V/20 A E-Mode GaN PSJ-HEMTs
IEEE Electron Device Letters
IF
4.5
2026-06-01
0
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AI
Ziwei Wang; Yuchuan Ma; Shuhui Zhang; Cheng Li; Jun Su; Yuki Satoshi; Tian Gao; Chao Liu
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High Power Density Millimeter-Wave Ultra-Thin InGaN Channel DH-HEMTs
IEEE Electron Device Letters
IF
4.5
2026-05-28
0
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AI
Hao Lu; Bin Hou; Ling Yang; Longge Deng; Meng Zhang; Mei Wu; Kai Cheng; Xiaohua Ma; Yue Hao
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Ultra-Thin Broadband Optical Skin Based on Graphene-Stack Electrochemical Structure via Ion Intercalation Tuning
IEEE Electron Device Letters
IF
4.5
2026-05-28
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AI
Xing Cao; Kaixi Bi; Longhao Liu; Guangchen Yin; Jinxian Dong; Lei Hu; Yichi Zhang; Linyu Mei; Xiujian Chou
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Corrections to “Semi-Classical Monte Carlo Simulation of Quantum Confinement Effects in Si Nanosheet and Fin FETs in Industry Standard Orientation”
IEEE Electron Device Letters
IF
4.5
2026-05-27
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AI
Uiho Lee; Jaeyeon Kim; Byoung Hak Hong; Wookhyun Kwon; Branch T. Archer; Leonard F. Register; Sanjay K. Banerjee; Jiwon Chang
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Leakage Current Reduction Strategy for Low-Power Low-Voltage Intrinsically Stretchable Organic Transistor
IEEE Electron Device Letters
IF
4.5
2026-05-27
0
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AI
Mingxin Zhang; Haowen Zhao; Yanhong Tong; Jing Sun; Haifeng Zhang; Peng Xue; Hao Liu; Xikai Sun; Xiang Song; Xiaoli Zhao; Qingxin Tang; Yichun Liu
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