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Doping-Less Feedback Field-Effect Transistors
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DOI：10.3390/mi15030316.png)
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In this study, we propose doping-less feedback field-effect transistors (DLFBFETs). Our DLFBFETs are 5 nm thick intrinsic semiconductor bodies with dual gates. Usually, DLFBFETs are virtually doped through charge plasma phenomena caused by the source, the drain, and the dual-gate electrodes as well as the gate biases. Our DLFBFETs can be fabricated through a simple process of creating contact between a metal and a silicon body without any doping processes. The voltages applied to both gates determine whether the DLFBFETs operate in diode or feedback field-effect transistor (FBFET) modes. In the FBFET mode, our DLFBFETs show good characteristics such as an on/off current ratio of similar to 10(4) and steep switching characteristics (similar to 1 mV/decade of current) that result from positive feedback phenomena without dopants.
Keyword:
doping-less device
feedback field-effect transistor
charge plasma
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论文数:
1.4W
被引数:
2.9W
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