Doohyeok Lim - Publications, H-index & Citations

Doohyeok Lim

kyonggi university

14H指数

43论文数

531被引数

收录论文 20

发表时间

1T-TCAM with binary storage enabling ternary matching via bias-controlled wildcards using a feedback field-effect transistor 1T-TCAM采用二进制存储，通过偏置控制的通配符利用反馈场效应晶体管实现三态匹配。

Nanotechnology

IF2.8

2026-03-30

PREAI

Sujin Kim; Junyoung Park; Doohyeok Lim; Sola Woo

Universal Logic-in-Memory Gates Using Reconfigurable Silicon Transistors 基于可重构硅晶体管的通用存内逻辑门

Micromachines 2025, Vol. 16, Page 1348

IF3

2025-11-28

OAAI

Sunhyuk Kim; Nahyeon Kim; Yaeyeon Ko; Doohyeok Lim

Fabrication and characterization of silicon field-effect diodes with forward-bias leakage path suppression in bulk silicon substrates 硅基体中具有正向偏置漏电流路径抑制的硅场效应二极管的制备与表征

PHYSICA SCRIPTA

IF2.6

2025-04-10

PREAI

Lim, D

Logic and static memory functions of an inverter comprising a feedback field effect transistor 包含反馈场效应晶体管的逆变器的逻辑和静态存储功能

nanotechnology

IF2.8

2025-03-24

PREAI

Kim, Daon; Lim, Doohyeok

Doping-Less Feedback Field-Effect Transistors 无掺杂反馈场效应晶体管

MICROMACHINES

IF3

2024-02-24

OAAI

Kim, Hakin; Lim, Doohyeok

Reconfigurable Feedback Field-Effect Transistors with a Single Gate 具有单栅极的可重构反馈场效应晶体管

NANOMATERIALS

IF4.3

2023-12-13

OAAI

Lee, Yoocheon; Lim, Doohyeok

Temperature-Dependent Electrical Characteristics of Silicon Biristor

MICROMACHINES

IF3

2023-11-28

OAAI

Kim, Eunseong; Lim, Doohyeok

Reconfigurable Logic-in-Memory Using Silicon Transistors

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2022-05-03

PREAI

Lim, Doohyeok; Cho, Kyoungah; Kim, Sangsig

Extremely bias stress stable enhancement mode sol-gel-processed SnO2 thin-film transistors with Y2O3 passivation layers

APPLIED SURFACE SCIENCE

IF6.9

2021-09-01

PREAI

Lee, Changmin; Lee, Won-Yong; Kim, Do Won; Kim, Hyeon Joong; Bae, Jin-Hyuk; Kang, In-Man; Lim, Doohyeok; Kim, Kwangeun; Jang, Jaewon

Integrate-and-Fire Neuron Circuit Without External Bias Voltages

FRONTIERS IN NEUROSCIENCE

IF3.2

2021-03-24

OAAI

Park, Young-Soo; Woo, Sola; Lim, Doohyeok; Cho, Kyoungah; Kim, Sangsig

Quasi-Nonvolatile Silicon Memory Device 准非易失性硅存储器件

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2020-11-08

OAAI

Lim, Doohyeok; Son, Jaemin; Cho, Kyoungah; Kim, Sangsig

Polarity control of carrier injection for nanowire feedback field-effect transistors

NANO RESEARCH

IF9

2019-08-01

PREAI

Lim, Doohyeok; Kim, Sangsig

Silicon nanowire CMOS NOR logic gates featuring one-volt operation on bendable substrates

NANO RESEARCH

IF9

2018-05-12

PREAI

Moon, Jeongje; Kim, Yoonjoong; Lim, Doohyeok; Kim, Sangsig

Silicon nanowire ratioed inverters on bendable substrates

NANO RESEARCH

IF9

2018-05-12

PREAI

Moon, Jeongje; Kim, Yoonjoong; Lim, Doohyeok; Im, Kyeungmin; Kim, Sangsig

Electrical characteristics of silicon nanowire CMOS inverters under illumination

OPTICS EXPRESS

IF3.3

2018-02-01

OAAI

Yoo, Jeuk; Kim, Yoonjoong; Lim, Doohyeok; Kim, Sangsig

Impact ionization and tunneling operations in charge-plasma dopingless device 电荷等离子体无掺杂装置中的碰撞电离和隧穿操作

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-11-01

PREAI

Kim, Minsuk; Kim, Yoonjoong; Lim, Doohyeok; Woo, Sola; Im, Kyeungmin; Cho, Jinsun; Kang, Hyungu; Kim, Sangsig

Memory characteristics of silicon nanowire transistors generated by weak impact ionization

SCIENTIFIC REPORTS

IF3.9

2017-09-29

OAAI

Lim, Doohyeok; Kim, Minsuk; Kim, Yoonjoong; Kim, Sangsig

Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

NANO RESEARCH

IF9

2016-09-01

PREAI

Yun, Junggwon; Lee, Myeongwon; Jeon, Youngin; Kim, Minsuk; Kim, Yoonjoong; Lim, Doohyeok; Kim, Sangsig

Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+-i-n+ Nanowires by Dual-Top-Gate Voltage Modulation

NANO LETTERS

IF9.1

2015-07-31

PREAI

Jeon, Youngin; Kim, Minsuk; Lim, Doohyeok; Kim, Sangsig

Bulk Feedback Field-Effect Transistor 体反馈场效应晶体管

IEEE Electron Device Letters

IF4.5

PREAI

Hakin Kim; Doohyeok Lim

研究方向