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Dynamic characteristic of 1200V p-GaN HEMT with ±20V gate operating range on the Si Substrates
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DOI：10.1088/1402-4896/ae67bb.png)
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Abstract
En 中文
This work demonstrates a 1200 V p-GaN HEMT device achieving a wide gate voltage operating range of -20 V to +20 V through the integration of a protective clamping circuit composed of depletion-mode (D-mode) and enhancement-mode (E-mode) GaN HEMTs at the gate. Comprehensive electrical characterization shows that in terms of static performance, the threshold voltage (V-th) is 2.4 V, the gate leakage current is 3 & times; 10(-6) A (V-GS = 0 V), Regarding dynamic characteristics, the turn-on process exhibits two-stage time delays: The Stage I is independent of drain voltage and is attributed to the additional parasitic capacitance introduced by the gate-clamping circuit, which can be described by an equivalent RC charging model and validated by TCAD-based mixed-mode simulations;The Stage II delay (>500 V) is caused by interface traps capturing carriers under high voltage. The turn-off time T-off) increases with drain-source voltage (V-DS), but it is shorter at -4 V turn-off compared to 0 V turn-off, an optimization attributed to the reverse electric field accelerating carrier extraction. The dynamic on-resistance remains stable during V-DS variations, confirming the device's reliability in high-voltage switching applications. This study provides a viable solution for high-voltage GaN HEMTs compatible with industrial-grade Si/SiC drivers.
Keywords:
p-GaN HEMT
dynamic characteristics
gate voltage operating range
clamping circuit
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