Dynamic characteristic of 1200V p-GaN HEMT with ±20V gate operating range on the Si Substrates
Zhao, Yaopeng; Hao, Jiamao; Shi, Jiahao; Luo, Pan; Li, Ang; Luo, Jingtao; Wang, Chong; Wang, Jianyuan; Liu, Kai; Yang, Lei; Wen, Haibing; Tan, Cher Ming
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