Endurance-Oriented STT-MRAM Implementation in Normally-off Microcontroller Unit

doi:10.1109/TCSI.2025.3636931

2025-12-10

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DOI：10.1109/TCSI.2025.3636931

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随着边缘设备中机器学习应用需求的日益增长，新兴边缘设备需要在宽温度范围内实现更高的耐久性，以支持训练过程中的持续权重更新。对于在电池供电的嵌入式应用中广泛使用非易失性存储器（NVM）设备而言，实现比eFlash提供的$10^{6}$更高的耐久性变得至关重要。本文提出了一种嵌入式自旋转移矩磁随机存取存储器（STT-MRAM）宏设计，包含功率不敏感的写入驱动器、近驱动器单元保护的写入方案以及温度自适应电源模块，强调了MRAM的高耐久性和低功耗，同时不牺牲器件级别的速度和紧凑特性。所提出的设計成功在-40℃至125℃的宽温度范围内运行，同时保持了比传统方法高出$10^{9}$倍的耐久性。凭借其高耐久性、高密度和低泄漏功耗，eMRAM随后与微控制器单元（MCU）进行了验证。

Keyword:

STT-MRAM

endurance

embedded non-volatile memory

wide temperature

MCU

期刊

ieee transactions on circuits and systems i: regular papers

IF:

论文数:

268

被引数:

机构

Southeast University

学者数:

2.1W

论文数: 8.6K

被引数: 480

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