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IEEE Electron Device Letters

IF4.5

论文数735

被引数23123

期刊论文 735

发表时间

Thin-Film Transistor-Based Digital Sweep Driver Circuit for Progressive Emission in Micro Light-Emitting Diode Displays 基于薄膜晶体管的数字扫描驱动电路用于微发光二极管显示器的逐行发射

IEEE Electron Device Letters

IF4.5

2026-10-23

PREAI

Joon-Sung Choi; JingHui Jin; Kook Chul Moon; Yong-Sang Kim

Gate-All-Around IGZO FET with Tubular Channel Achieve High Current and Stability 环绕栅极IGZO FET通过管状沟道实现高电流和稳定性

IEEE Electron Device Letters

IF4.5

2026-10-23

PREAI

Shipeng Wang; Weiwei Li; Kaiping Zhang; Jiebin Niu; Shengjie Zhao; Yu Liu; Huan Liu; Wenfeng Jiang; Congyan Lu; Guanya Wang; Cheng Lu; Chuanke Chen; Di Geng; Ling Li

CMOS-Compatible Metal-Insulator-Metal Electron Source Enabled by Grass-like Alumina CMOS兼容的类草状氧化铝金属-绝缘体-金属电子源

IEEE Electron Device Letters

IF4.5

2026-10-23

PREAI

Xiaojing Huyan; Haolin Lei; Guanyang Zhang; Yongxun Liu; Shinan Wang; Qiang Liu; Wenjie Yu

11000 PPI CMOS-Driven Quantum Dot Microdisplays Enabled by Interfacial Work-Function Engineering 11000 PPI CMOS驱动的量子点微显示器通过界面功函数工程实现

IEEE Electron Device Letters

IF4.5

2026-10-22

PREAI

Fumin Lu; Xuhui Wan; Yuqi Wang; Xiangtian Xiao; Depeng Li; Min Liao; Zijie Fu; Yixing Chen; Xiao Wei Sun; Dan Wu; Kai Wang

High-Speed Dual-Illumination Quasi-Vertical β-Ga₂O₃ Schottky Solar-Blind UV Photodetector 高速双照明准垂直β-Ga₂O₃肖特基日盲紫外光电探测器

IEEE Electron Device Letters

IF4.5

2026-10-19

PREAI

Yunlong Xie; Chen Cui; Huanyu Zhang; Zhucheng Li; Yu Hu; Tiwei Chen; Yuhua Sun; Li Zhang; Chunhong Zeng; Xiaodong Zhang; Zhongming Zeng; Baoshun Zhang

Recessed-Gate N-Polar GaN HEMT with Dual Transconductance Peaks recessed-gate N极性GaN HEMT器件具有双跨导峰值

IEEE Electron Device Letters

IF4.5

2026-10-19

PREAI

Yu Qi; Xiaoning Zhan; Xinkun Zhang; Qian Li; Jiaanli Wang; Cheng Li; Yu Zhou; Jianxun Liu; Qian Sun; Hui Yang

Impact of Scaling on the Temperature Dependence of GaN HEMTs 栅极尺寸缩放对GaN HEMT温度依赖性的影响

IEEE Electron Device Letters

IF4.5

2026-10-19

PREAI

Biddut K. Sarker; Leonard A. Duncan; Shaikh S. Ahmed; Stefan Nikodemski; Erdem Arkun; Dan Denninghoff; Kelson D. Chabak; Andrew J. Green; Ahmad E. Islam

GeTe Phase-change Switch with a Graphene Buffer Layer Featuring Low Thermal Stress and High RF Performance GeTe相变开关与石墨烯缓冲层，具有低热应力和高射频性能

IEEE Electron Device Letters

IF4.5

2026-10-19

PREAI

Xin Sun; Libin Gao; Keyan Chen; Zegao Wang; Tianpeng Liang; Hongwei Chen; Jihua Zhang

Ten-Layer Stacked FeRAM by Sequential 3D Crosspoint-Compatible Integration 十层堆叠铁电随机存取存储器通过顺序3D交叉点兼容集成

IEEE Electron Device Letters

IF4.5

2026-10-19

PREAI

Renhao Xue; Ruizhan Yan; Wenjuan Zhou; Shengjie Cao; Qianqian Huang; Xiwen Liu; Mansun Chan

Highly stretchable synaptic transistors based on microcracked Ag electrode for strain-adaptive neuromorphic electronics 基于微裂纹Ag电极的高拉伸性突触晶体管用于应变自适应神经形态电子学

IEEE Electron Device Letters

IF4.5

2026-10-19

PREAI

Jin-Shuo Wang; Da Yin; Ting-Ting Pan; Xiang-Wei Li; Hao-Yang Zhang; Shi-Xin Jia; Yan-Gang Bi; Yu Liu; Jing Feng

3.0 W/mm Output Power Density at W-Band from Enhancement-Mode AlGaN/GaN HEMT with Free-Standing T-Gate 在W波段，具有自由-standing T栅的增强型AlGaN/GaN HEMT实现3.0 W/mm输出功率密度

IEEE Electron Device Letters

IF4.5

2026-10-15

PREAI

Zhentong Huang; Pengfei Wang; Minhan Mi; Dongxu Xiao; Xiang Du; Feiyang Chen; Xiangxin Cao; Jingyun Yao; Yifan Liu; Xiaohua Ma; Yue Hao

Resistive-embedded Field Effect Transistor - ReFET: A Highly Scalable 1T-NVM Architecture Bypassing the Voltage-Divider Bottleneck in Resistive Switching 电阻嵌入式场效应晶体管-ReFET：一种可高度扩展的1T-NVM架构，绕过了电阻开关中的电压分压瓶颈

IEEE Electron Device Letters

IF4.5

2026-10-15

OAAI

Yi Xiang Huang; Cheng Yi Yang; Zhi Yuan Chen; E Ray Hsieh

Microscale Perovskite-based Memristors with Ultra-low Power Consumption and Good Endurance 微米级钙钛矿基忆阻器具有超低功耗和良好的耐久性

IEEE Electron Device Letters

IF4.5

2026-10-13

PREAI

Conghui Tan; Qiming Liu; Huayi Tang; Bingbing Li; Jing Li; Jiao Xu; Yiming Yang

Stimulus-Dependent Arousal-State Regulation Achieved by Oxide Heterojunction Memristor 刺激依赖的氧化物异质结忆阻器实现的唤醒状态调控

IEEE Electron Device Letters

IF4.5

2026-10-13

PREAI

Wenhua Wang; Zhihan Zhang; Dong Wang; Jian Liang; Zhengxiao Wu; Rui Meng; Lindong Wu; Xiaodong Huang

Channel-Proximal AlN/GaN Digital Alloying Enhances Al-rich AlGaN Heterojunction Phototransistors 通道近邻AlN/GaN数字合金化增强富铝AlGaN异质结光电晶体管

IEEE Electron Device Letters

IF4.5

2026-10-13

PREAI

Zhanyu Gao; Zhuoya Peng; Zesheng Lv; Hao Jiang

Bias- and Time-Dependent Gate Injection Operation in an n-type SONOS TFT with an n⁺ Poly-Si Gate 偏置和时间依赖的栅注入操作在n型SONOS TFT中的n⁺多晶硅栅

IEEE Electron Device Letters

IF4.5

2026-10-09

PREAI

Joonhyung Cho; Joon Hwang; Suyoung Park; Min-Kyu Park; Jong-Ho Lee

Reconfigurable Hf_0.5Zr_0.5O₂-based Memristor for CSNN Applications 可重构的Hf_0.5Zr_0.5O₂基忆阻器用于CSNN应用

IEEE Electron Device Letters

IF4.5

2026-10-09

PREAI

Shaotian Zhang; Wenhui Wang; Chen Lu; Tianyu Wang; Hao Zhu; Qingqing Sun; David Wei Zhang; Jialin Meng; Lin Chen

Tailoring Morphotropic Phase Boundary Characteristics in Ferroelectric Hf_0.66Zr_0.33O₂ via Ozone Pulse Time Engineering of the Seed Layer 通过籽晶层的臭氧脉冲时间工程调控铁电Hf_0.66Zr_0.33O₂的形貌相界特性

IEEE Electron Device Letters

IF4.5

2026-10-08

PREAI

Hyundeok Yoo; Manh-Cuong Nguyen; An Hoang-Thuy Nguyen; Seunghyun Jung; Gyeongyeol Lee; Sookyung Kim; Soomin Lee; Sungju Jung; Rino Choi

6 A/1.6 kV or 1.4 GW/cm² β-Ga₂O₃ MOS-JFETs with Sandwiched-like RESURF Structure 6 A/1.6 kV或1.4 GW/cm²具有夹层式RESURF结构的β-Ga₂O₃ MOS-JFETs

IEEE Electron Device Letters

IF4.5

2026-10-08

PREAI

Hongqing Yue; Hong Zhou; Yitao Feng; Hao Fang; Xiaorong Zhang; Yanbo Chen; Guotao Tian; Chenlu Wang; Min Zhou; Qian Feng; Chunfu Zhang; Rujun Sun; Yue Hao; Jincheng Zhang

Partial Bottom-Gate Architecture for Enhanced NBIS Stability in Dual-Gate IGZO TFTs 部分底栅结构对双栅IGZO TFTs中NBIS稳定性的增强

IEEE Electron Device Letters

IF4.5

2026-10-07

PREAI

Hong-Yi Tu; Chia-Chuan Wu; Ting-Chang Chang; Han-Yu Chang; Ya-Ting Chien; Bo-Shen Huang; Po-Yu Yen; Yu-Hsiung Tsai; Tsung-Ming Tsai