.png){kind=icon}
.png){kind=icon}
Return
Experiment Demonstration of Hybrid-Orientation Sequential CFET Boosting Hole Mobility
.png){kind=icon}
PRE
AI
K
Z
Z
H
M
J
Y
Y
Y
J
M
Y
L
Q
H
X
罗
DOI：10.1109/led.2026.3702148.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
The complementary field-effect transistor (CFET) has garnered substantial research interest in next-generation electronics owing to its superior area-scaling in footprint. However, mismatched drive currents between n- and pFET severely degrade CFET area efficiency. Herein, we demonstrate a hybrid-orientation-sequential CFET featuring a (110) Si channel to boost pFET performance. The effective hole mobility is enhanced by a factor of 2.27 relative to its (100) counterpart, peaking at 85.8 cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>/(V<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot $ </tex-math></inline-formula>s). Moreover, balanced driving current of n/pFET is achieved via a low-thermal-budget process (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\le 500~^{\circ }$ </tex-math></inline-formula>C), with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$296.8~\mu $ </tex-math></inline-formula>A/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m for pFET and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$328.5~\mu $ </tex-math></inline-formula>A/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m for nFET at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {DD}} =1.2$ </tex-math></inline-formula> V, respectively. Furthermore, the measured voltage transfer curve (VTC) of hybrid-orientation-sequential CFET yields a high voltage gain of 41 V/V. The proposed hybrid-orientation seqCFET offers a promising integration scheme for highly dense logic circuit.
Keywords:
Sequential CFET
hybrid surface orientation
3D integration
low thermal budget process
current mismatch
Journal
IF:
4.5
Papers:
614
Citations:
2.3W
Organization
Cited Papers