.png){kind=icon}
返回
Gain-Cell Embedded DRAM-Based Physical Unclonable Function
.png){kind=icon}
PRE
AI
DOI：10.1109/TCSI.2018.2838331.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
Physical unclonable functions (PUFs) are important elements in hardware-secured systems as they can generate chip identification and encryption keys based on random variables of the manufacturing process. Many previously proposed PUF implementations are based on SRAM memory technology, since it is embedded on-chip and can provide such randomness. Logic-compatible gain-cell embedded DRAM (GC-eDRAM) is a low density, low leakage alternative to traditional SRAM for the implementation of embedded memories that also provide an additional mechanism of randomness by means of the data retention time (DRT) of the bitcells. In this paper, we propose using the DRT of GC-eDRAM arrays as a source for the generation of an intrinsic PUF. We provide an in-depth analysis of the leakage mechanism of GC-eDRAM and demonstrate how it determines the DRT of the bitcell. Based on this analysis, we provide an authentication methodology for enrollment and evaluation of a GC-eDRAM based PUF. Monte Carlo simulations on a 1 kbit array in 28 nm technology demonstrate the high uniqueness of the PUF with an inter-die Hamming distance of 50%. Reliability analysis under a wide voltage range (0.4 V-1 V) and temperature (0 (0 degrees C-85 degrees C) variation demonstrate the statistical robustness of the proposed PUF less than a 6% error-rate.
Keyword:
Physical unclonable functions
gain-cell embedded DRAM
data retention time
SRAM
eDRAM
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
5.2
论文数:
9.8K
被引数:
2.2W
机构
引用论文
.png){kind=icon}
查看更多内容