.png){kind=icon}
.png){kind=icon}
Return
High-Performance Complementary Circuits from Two-Dimensional MoTe2
.png){kind=icon}
PRE
AI
DOI：10.1021/acs.nanolett.3c03184.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Two-dimensional (2D) materials hold great promise for future complementary metal-oxide semiconductor (CMOS) technology. However, the lack of effective methods to tune the Schottky barrier poses a challenge in constructing high-performance complementary circuits from the same material. Here, we reveal that the polarity of pristine MoTe2 field-effect transistors (FETs) with minimized air exposure is n-type, irrespective of the metal contact type. The fabricated n-FETs with palladium contact can reach electron currents up to 275 mu A/mu m at V-DS = 2 V. For p-FETs, we introduce a novel nitric oxide doping strategy, allowing a controlled transition of MoTe2 FETs from n-type to unipolar p-type. By doping only in the contact region, we demonstrate hole currents up to 170 mu A/mu m at V-DS= -2 V with preserved I-on/I-off ratios of 105. Finally, we present a complementary inverter circuit comprising the high-performance n- and p-type FETs based on MoTe2, promoting the application of 2D materials in future electronic systems.
Keywords:
CMOS
two-dimensional materials
MoTe2
high-performance
Schottky barrier
nitric oxide doping
inverter
