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SaveSynergistic construction of highly symmetrical lanthanide single-ion magnets using neutral phosphoryl and anionic thiocyanate ligands
Liu, Bei; Dong, Xiao-Yan; Gong, Hui-Wen; Sun, Zheng; Sun, Rong; Zhu, Wen-Hua; Zhang, Lei; Sun, Hao-Ling; Zhao, Man-Yun; Huang, Ning-Ning; Bian, Qing-Yan; Gao, Song Share Save Share Save Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal ContactsSun, Zheng; Kim, Seong Yeoul; Cai, Jun; Shen, Jianan; Lan, Hao-Yu; Tan, Yuanqiu; Wang, Xinglu; Shen, Chao; Wang, Haiyan; Chen, Zhihong; Wallace, Robert M.; Appenzeller, Joerg Share Save Share Save Tailoring amorphous boron nitride for high-performance two-dimensional electronicsChen, Cindy Y.; Sun, Zheng; Torsi, Riccardo; Wang, Ke; Kachian, Jessica; Liu, Bangzhi; Rayner, Gilbert B.; Chen, Zhihong; Appenzeller, Joerg; Lin, Yu-Chuan; Robinson, Joshua A. Share Save Share Save High Conductivity Update Linearity MoS2 Memtransistors Array Based on Lithium-Ion ModulationZhang, Lifang; Liang, Ange; Wang, Fang; Han, Yemei; Lin, Xin; Shan, Xin; Hu, Kai; Xie, Yangyang; Sun, Zheng; Song, Zhitang; Zhang, Kailiang Share Save Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2Sun, Zheng; Pang, Chin-Sheng; Wu, Peng; Hung, Terry Y. T.; Li, Ming-Yang; Liew, San Lin; Cheng, Chao-Ching; Wang, Han; Wong, H-S Philip; Li, Lain-Jong; Radu, Iuliana; Chen, Zhihong; Appenzeller, Joerg Share Save 
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