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High-power edge emitting red laser diode optimisation using optical simulation
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DOI：10.1023/A:1007076928803.png)
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摘要
En 中文
The laser diode structures reported up to now in literature for the red wavelength range are still far from optimal - mostly because many of the desired characteristics are contradictory coupled. Some of the contradictory coupled laser diode characteristics are investigated and a novel transverse layer structure is proposed. Both optical simulation and a fully self-consistent model are used in a design optimization methodology and simple evaluation and optimization criteria are derived. A number of the analyzed high-power edge-emitting GazIn1-zP/(AlxGa1-x)(y)In1-yP/GaAs quantum well laser structures were prepared using all-solid-source molecular beam epitaxy for layer growth and remarkable performances were obtained (continuous wave output powers of 3 W at 670 nm, 2 W at 650 nm, and 1 W at 630 nm; threshold current densities of 350-450 A/cm(2) for 670 nm, 500-540 A/cm(2) for 650 nm, and less than 700 A/cm(2) for 630 nm). The good agreement between measurements and simulations for the prepared structures indicate that significant performance improvements - predicted by the simulations - are still possible. The presented novel structure and design optimisation procedure can also be applied to laser diode structure optimisation in other emission ranges - like, for example, in the case of 800 nm-range edge emitting AlxGa1-xAsyP1-y/GazIn1-zAswP1-w/GaAs laser diodes.
Keyword:
all-solid-source MBE
high-power
red
simulation
transverse structure
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