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Highly conductive p-type amorphous oxides from low-temperature solution processing
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DOI：10.1063/1.4754608.png)
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摘要
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We report solution-processed, highly conductive (resistivity 1.3-3.8m Omega cm), p-type amorphous A-B-O (A=Bi, Pb; B=Ru, Ir), processable at temperatures (down to 240 degrees C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E-VBM = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754608]
Keyword:
THIN-FILM TRANSISTORS
SOL-GEL
LIQUID PROCESS
SEMICONDUCTOR
TRANSPARENT
FABRICATION
ELECTRONICS
DEPOSITION
TFT
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IF:
3.6
论文数:
10.4W
被引数:
17.8W
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